The continuous progress in the development of MOS field-effect transistors by down-scaling of the device feature size leads to high gate leakage currents. State-of-the-art devices deal with an Equivalent Oxide Thickness (EOT) of 1.5nm and below, and thus high-k dielectrics are a hot research topic[1]. However, quantum mechanical tunneling significantly affects the device characteristics and thu...

We study collective and single-particle intersubband excitations in a system of quantum wires coupled via weak tunneling. For an isolated wire with parabolic confinement, the Kohn's theorem guarantees that the absorption spectrum represents a single sharp peak centered at the frequency given by the bare confining potential. We show that the effect of weak tunneling between two parabolic quantum...

Gate leakage currents in AlGaN/GaN heterostructure field-effect transistor ~HFET! structures with conventional and polarization-enhanced barriers have been studied. Comparisons of extensive gate leakage current measurements with two-dimensional simulations show that vertical tunneling is the dominant mechanism for gate leakage current in the standard-barrier HFET and that the enhanced-barrier s...

The tunneling field-effect transistor (TFET) is one of the most promising candidates for future low-power electronics because of its potential to achieve a subthreshold swing less than the 60 mV/decade thermal limit at room temperature. It can surpass this limit because the turn-on of tunneling does not sample the Maxwell-Boltzmann distribution of carriers that gives rise to the 60 mV/decade li...

In this comment we demonstrate that the inclusion of field-induced quantum confinement effects through appropriate discretization of conduction and valence bands refutes the suitability of a germanium electron–hole bilayer tunnel field-effect transistor with symmetrically arranged gates (Jeong et al 2015 Semicond. Sci. Technol. 30 035021). Delayed alignment of the first electron and hole energy...

We demonstrate the experimental implementation of an optical lattice that allows for the generation of large homogeneous and tunable artificial magnetic fields with ultracold atoms. Using laser-assisted tunneling in a tilted optical potential, we engineer spatially dependent complex tunneling amplitudes. Thereby, atoms hopping in the lattice accumulate a phase shift equivalent to the Aharonov-B...

Articles you may be interested in Tunneling field effect transistor integrated with black phosphorus-MoS2 junction and ion gel dielectric Appl. Material and device properties of superacid-treated monolayer molybdenum disulfide Appl. On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures Appl.

Articles you may be interested in Acoustic phonon assisted free-carrier optical absorption in an n-type monolayer MoS2 and other transition-metal dichalcogenides J. Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects Appl. Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field ...

We investigate electronic quantum transport through nanowires with one-sided surface roughness. A magnetic field perpendicular to the scattering region is shown to lead to exponentially diverging localization lengths in the quantum-to-classical crossover regime. This effect can be quantitatively accounted for by tunneling between the regular and the chaotic components of the underlying mixed cl...