We describe a pulsed measurement technique for suppressing hysteresis for carbon nanotube (CNT) device measurements in air, vacuum, and over a wide temperature range (80-453 K). Varying the gate pulse width and duty cycle probes the relaxation times associated with charge trapping near the CNT, found to be up to the 0.1-10 s range. Longer off times between voltage pulses enable consistent, hyst...

A typical signature of charge extraction in disordered organic systems is dispersive transport, which implies a distribution of charge carrier mobilities that negatively impact on device performance. Dispersive transport has been commonly understood to originate from a time-dependent mobility of hot charge carriers that reduces as excess energy is lost during relaxation in the density of states...

We consider how to optimize memory use and computation time in operating a quantum computer. In particular, we estimate the number of memory qubits and the number of operations required to perform factorization, using the algorithm suggested by Shor. A K-bit number can be factored in time of order K3 using a machine capable of storing 5K+1 qubits. Evaluation of the modular exponential function ...

Efficient collection of trapped ion fluorescence is critical for high-fidelity qubit detection and ion-photon logical interconnects in ion trap quantum information processing. The expected size of future many-ion processors place scalability requirements for high efficiency optical collection systems. We report the development and testing of a microfabricated planar ion trap with an integrated ...

We show that single electron tunneling devices such as the Cooper-pair box or double quantum dot can be sensitive to the zero-point fluctuation of a single trapping center hybridized with a Fermi sea. If the trap energy level is close to the Fermi sea and has linewidth gamma > k(B)T, its noise spectrum has an Ohmic Johnson-Nyquist form, whereas for gamma < k(B)T the noise has a Lorentzian form ...

We performed the 1/f noise measurements on n-channel indium antimonide ~InSb! metal–oxide– semiconductor field-effect transistors ~MOSFETs! biased in linear and saturation regions operated at 77 K. Through the investigation of the dependence of drain voltage noise power spectral density on gate and drain bias, we have estimated the oxide–semiconductor interface trap density as a function of ene...

Collision-induced dissociation (CID) is the most common tool for molecular analysis in mass spectrometry to date. However, there are difficulties associated with many applications because CID does not provide sufficient information to permit details of the molecular structures to be elucidated, including post-translational-modifications in proteomics, as well as isomer differentiation in metabo...

The operation of gallium arsenide schottky barrier field effect transistor is greatly affected by several anomalies such as frequency dispersion of output impedance, zds; this low frequency behaviour is related to the presence of capture centres at the channel/substrate interface. In this context, we investigate the influence of such defects via a circuit consisting of a capacitance in series w...

The recently introduced equivalent formulation of the integer factorization problem for N = xy, obtaining a function of the primes E(x) within the factorization ensemble, is reviewed. Here we demonstrate that this formulation can be readily translated to the physics of a quantum device in which the quantities Ek are the eigenvalues of a bounded Hamiltonian. The spectrum is solved for xk = o( √ ...

The poor efficiency of microfluidic single cell trapping is currently restricting the full potential of state-of-the-art single cell analyses. Using fluid dynamics simulations in combination with particle image velocimetry to systematically optimize trap architectures, we present a microfluidic chip with enhanced single cell trapping and on-chip culture performance. Upon optimization of trap ge...