نتایج جستجو برای: transistor

تعداد نتایج: 18676  

2017
Arash Takshi Houman Yaghoubi Jing Wang Daniel Jun J. Thomas Beatty

Due to the high internal quantum efficiency, reaction center (RC) proteins from photosynthetic organisms have been studied in various bio-photoelectrochemical devices for solar energy harvesting. In vivo, RC and cytochrome c (cyt c; a component of the biological electron transport chain) can form a cocomplex via interprotein docking. This mechanism can be used in vitro for efficient electron tr...

2017
Mohammed Hadifur Rahman Shahida Rafique Mohammad Shafiul Alam

Defect rate in Nanoelectronics is much higher than conventional CMOS circuits. Hardware redundancy can be a suitable solution for fault tolerance in nano level. A voter circuit is a part of a redundancy based fault tolerant system that enables a system to continue operating properly in the event of one or more faults within its components. Robustness of the voter circuit defines the reliability...

Journal: :Nano letters 2010
Dana Weinstein Sunil A Bhave

This paper introduces the resonant body transistor (RBT), a silicon-based dielectrically transduced nanoelectromechanical (NEM) resonator embedding a sense transistor directly into the resonator body. Combining the benefits of FET sensing with the frequency scaling capabilities and high quality factors (Q) of internal dielectrically transduced bar resonators, the resonant body transistor achiev...

2001
Xuedong Hu Igor Žutić

We review several proposed spintronic devices that can provide new functionality or improve available functions of electronic devices. In particular, we discuss a high mobility field effect spin transistor, an all-metal spin transistor, and our recent proposal of an all-semiconductor spin transistor and a spin battery. We also address some key issues in spin-polarized transport, which are relev...

2015
G. Lioliou

A comprehensive summary and analysis of the electronic noise affecting the resolution of X-ray, γ-ray and particle counting spectroscopic systems which employ semiconductor detectors and charge sensitive preamplifiers is presented. The noise arising from the input transistor of the preamplifier and its contribution to the total noise is examined. A model for computing the noise arising from the...

Journal: :Nanotechnology 2011
Marina Y Timmermans Kestutis Grigoras Albert G Nasibulin Ville Hurskainen Sami Franssila Vladimir Ermolov Esko I Kauppinen

A novel non-lithographic technique for the fabrication of carbon nanotube thin film transistors is presented. The whole transistor fabrication process requires only one mask which is used both to pattern transistor channels based on aerosol synthesized carbon nanotubes and to deposit electrodes by metal evaporation at different angles. An important effect of electrodynamic focusing was utilized...

2012
Xiying Ma Weixia Gu Jiaoyan Shen Yunhai Tang

We report a high-performance graphene/Si field-effect transistor fabricated via rapid chemical vapor deposition. Oligolayered graphene with a large uniform surface acts as the local gate of the graphene transistors. The scaled transconductance, gm, of the graphene transistors exceeds 3 mS/μm, and the ratio of the current switch, Ion/Ioff, is up to 100. Moreover, the output properties of the gra...

2015
Steve Dudkiewicz Gary Simpson Giampiero Esposito Mauro Marchetti Marc Vanden Bossche

Scattering parameters (S-parameters) were first mentioned in articles and textbooks in the 1950s and 1960s by Matthews, Collins and Kurokawa and popularized by the release of Hewlett Packard’s first network analyzers in the 1960s. Since then, S-parameters have been used to describe the complex characteristics of a network by quantifying the RF power flowing between its ports. S-parameters are e...

2007
Martijn Goossens Jacob Ritskes Chris Verhoeven Arthur van Roermund

| This article describes an analog neuron and synapse cell that each consist of only one Single Electron Tunneling (SET) Transistor. Simulation results show that using the Random Weight Changing Learning algorithm, a small neural network with these devices can learn the XOR function. The periodic transfer function and the random ooset charges of the transistor can successfully be dealt with by ...

2012
K. Krishnaveni Raja Balachandar S. K. Ayyaswamy

In this paper Adomian's Decomposition Method (ADM) is employed to solve observer design in generalized state space or singular system of transistor circuits. From the example, the solution of singular system of transistor circuits shows that the ADM is more simple and easy to use than Haar Wavelet and Single Term Walsh Series (STWS) method.

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