Charge transport in organic devices depends strongly on the molecular order and morphology of the organic semiconductor thin films. In the design of new organic semiconductors, the selection of the appropriate core plays a key role in the molecular packing and charge transport characteristics of the organic device. Four derivatives of carbazole that mainly differ in the extension of the π-conju...

This tutorial is intended to graduate students, specialized in microelectronics formation. Before this work, the concerned students have spent one week in the cleanroom. In this training, with the help of teachers of the common microelectronics center, they processed and characterized a specific thin film transistor technology. The main goal was to set-up a bench that allows measuring dynamic p...

TIPS-Pentacene, an organic semiconductor characterized by its good electronic properties, solubility, and stability, is used primarily in organic thin-film transistors (OTFT). This research seeks to create an OTFT by crafting a stencil, depositing the source and drain onto a substrate’s surface, and processing TIPS-Pentacene onto the channel between them. In addition, if time permits, the elect...

We report on a fabrication method of the hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) using a maskless laser-write lithography (LWL). Level-to-level alignment with a high accuracy is demonstrated using LWL method. The obtained results show that it is possible to fabricate a-Si:H TFTs using a well-established a-Si:H TFT technology in combination with the maskless lithogra...

We present the results of studies on the electrical and physical modifications to Poly(3hexylthiophene), upon thermal annealing. Thermally-induced performance modifications and thermal stability of polythiophene thin film transistors are explored. We observe substantial mobility improvements in devices annealed at low temperatures (<80°C), as well as increases in on/off ratios by two orders of ...

Water-enhanced degradation of p-type low temperature polycrystalline silicon thin film transistors under negative bias temperature (NBT) condition is studied. H2O penetration into gate oxide network and the role of H2O during NBT stress are confirmed and clarified respectively. To prevent H2O diffusion, a combination of a layer of PECVD SiO2 and a layer of PECVD Si3N4 as passivation layers are ...

Article history: Received 21 May 2017 Received in revised form 19 July 2017 Accepted 26 July 2017 Available online 7 August 2017 For the next generation display, foldable display is one of the attractive candidates. However, the degradation effects due to themechanical stress on the device are unavoidable. A strain due to themechanical stress generates cracks on the thin film transistors (TFTs)...

Tetracene thin film transistors with rare earth oxide (Nd2O3) as gate dielectric is reported in this work. Rare earth oxide with high dielectric constant and low leakage current improve the performance of the organic thin film transistors (OTFTs). The fabricated tetracene OTFTs have shown good output characteristics with mobility 0.93x10 cm/V.s, ON-OFF ratio 3.3x10, sub-threshold swing 0.06 V/d...

We have developed a process of growing ultrathin oxide on polysilicon layer by using Electron Cyclotron Resonance (ECR) N2O plasma. Sub-4 nm thick polyoxide on n+ and p+ polysilicon layer were grown and characterized. The oxides have relatively large breakdown voltage, small electron trapping and QBD up to 7 C/ for polyoxide on p+ cm2 polysilicon and up to 5 C/ for polyoxide on n+ polysilicon u...