Keywords: Metalorganic chemical vapor deposition (MOCVD) Metal–oxide–semiconductor field effect transistor (MOSFET) Nanowire a b s t r a c t Depletion-mode metal–oxide–semiconductor field effect transistors (MOSFETs) with GaAs planar nano-wire (NW) channels are successfully demonstrated. The Si-doped planar GaAs NWs are grown in a selective lateral epitaxy manner via Au-assisted vapor–liquid–so...

This paper demonstrates the design of high-isolation millimeter-wave monolithic integrated switches using MOCVD-grown InGaAs/InP PIN diodes as switching devices. W-band single-pole single-throw switch using double shunt diode topology allowed significant improvement of isolation while keeping insertion loss low. The SPST switch used two InGaAs PIN diodes and demonstrated better than 35dB isolat...

In this review, we report on the use of low pressure plasmas for elaborating materials at the heart of solid polymer fuel cells (SPFC), especially electrodes and the membrane electrolyte. Electrodes are formed using plasma sputtering techniques while the ion conducting membranes are built up using plasma polymerization. Fuel cell performance will be improved by these approaches. The electrode c...

Abstract Experimental results are reported for a medium-wavelength infrared (MWIR) HgCdTe photodetector designed in joint laboratory run by VIGO Photonics S.A. and the Military University of Technology. The parameters MWIR detectors fabricated with heterostructures were studied. Advances metal–organic chemical vapor deposition (MOCVD) technique enable growth epilayers wide range composition dop...

We report the self-assembly of core–shell GeTe/Sb2Te3 nanowires (NWs) on Si (100), and SiO2/Si substrates by metalorganic chemical vapour deposition, coupled to vapour–liquid–solid mechanism, catalyzed Au nanoparticles. Scanning electron microscopy, X-ray diffraction, micro-Raman mapping, high-resolution transmission energy loss spectroscopy were employed investigate morphology, structure, comp...