In this paper, a method of strain actuation of single-walled carbon nanotube (SWNT) films using droplets is examined, and the physical origin of an open-circuit voltage (Voc)-observed across the film during this process-is explored. We demonstrate that droplet actuation is driven by the formation of a capillary bridge between the suspended SWNT films and the substrates, which deforms the films ...

We report on the reversible detection of CaptAvidin, a tyrosine modified avidin, with single-walled carbon nanotube (SWNT) field-effect transistors (FETs) noncovalently functionalized with biotin moieties using 1-pyrenebutyric acid as a linker. Binding affinities at different pH values were quantified, and the sensor's response at various ionic strengths was analyzed. Furthermore, protein "fing...

Department of Mechanical Engineering, The University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan Received 31 December 2005; in final form 20 February 2006 Abstract A method for detachment of vertically aligned single-walled carbon nanotube (VA-SWNT) films from substrates simply using hot water has been developed. The VA-SWNT films were peeled off spontaneously by submersing the subst...

In this study, we investigated the internal structure of ’as-grown’ vertically aligned single-walled carbon nanotube (VA-SWNT) films by cross-sectional transmission electron microscopy (TEM). The VA-SWNTs were produced by the alcohol catalytic CVD method [1, 2], and transferred onto a TEM grid using a hot water technique [3]. The resulting freestanding VA-SWNT film was observed along the alignm...

The potential to exploit single-walled carbon nanotubes (SWNTs) in advanced electronics represents a continuing, major source of interest in these materials. However, scalable integration of SWNTs into circuits is challenging because of difficulties in controlling the geometries, spatial positions, and electronic properties of individual tubes. We have implemented solutions to some of these cha...

The interface trap density in single-walled carbon nanotube (SWNT) network thin-film transistors (TFTs) is a fundamental and important parameter for assessing the electronic performance of TFTs. However, the number of studies on the extraction of interface trap densities, particularly in SWNT TFTs, has been insufficient. In this work, we propose an efficient technique for extracting the energy-...

The effect of cleaning the surface of single-walled carbon nanotube (SWNT) networks by thermal and the O₂ plasma treatments is presented in terms of NH₃ gas sensing characteristics. The goal of this work is to determine the relationship between the physicochemical properties of the cleaned surface (including the chemical composition, crystal structure, hydrophilicity, and impurity content) and ...

We have investigated reversible single-wall carbon nanotube (SWNT) oxidation by quantitative analysis of the oxide-induced absorption bleaching and luminescence quenching at low pH. These data, in combination with DFT structure calculations, suggest that the nanotube oxide is a 1,4-endoperoxide. At low pH, the endoperoxide protonates to create a hydroperoxide carbocation, introducing a hole in ...

Field-effect transistors were fabricated using high-density single-walled carbon nanotube (SWNT) thin films directly grown on suitable substrates. Such approach eliminated the variations of device behaviors in individual SWNT devices by utilizing a large number of SWNTs in each device. We have found that the behaviors of such devices are closely related to the surface charge densities around SW...

The single-walled carbon-nanotube ~SWNT! was grown directly onto the top of the conventional Si atomic force microscopy ~AFM! cantilever. This SWNT AFM cantilever was introduced into the AFM nano-oxidation process, which oxidized the titanium ~Ti! metal film on the atomically flat a-Al2O3 substrate and formed the ultranarrow oxidized titanium (TiOx) line of 5 nm width. This TiOx line was used a...