Epitaxially strained SrRuO3 films have been a model system for understanding the magnetic anisotropy in metallic oxides. In this paper, we investigate of Ru 4d and O 2p electronic structure properties using high-quality epitaxially (compressive tensile) grown by machine-learning-assisted molecular beam epitaxy. The element-specific hybridization between orbitals were characterized M2,3-edge K-e...

The measurement of the density of two-dimensional islands by scanning tunneling microscopy after submonolayer growth is used to determine the strain dependence of surface diffusion. Templates of strained and relaxed Ge surfaces with the same surface reconstruction are prepared for comparison. The diffusion barrier for Ge and Si adatoms is found to increase with increasing compressive strain of ...

5 Movement for many animal species is constrained in space by barriers such as rivers, shore6 lines, or impassable cliffs. We develop an approach for modeling animal movement con7 strained in space by considering a class of constrained stochastic processes, reflected stochas8 tic differential equations. Our approach generalizes existing methods for modeling uncon9 strained animal movement. We p...

The equilibrium shape of a monatomic strained island on a substrate depends on the step free energies and the difference in surface stress between the island and the substrate. For small island sizes the step free energies dominate, resulting in compact islands. Beyond a critical island size, however, the strain energy becomes dominant and the island maximizes its perimeter, resulting in elonga...

Strained heterostructures are now widely used to realize high-performance lasers. Highly mismatched epitaxy also produces defect-free quantum dots via an island growth mode. The characteristics of high-speed strained quantum well and quantum dot lasers are described. It is seen that substantial improvements in small-signal modulation bandwidth are obtained in both 1 lm (48 GHz) and 1.55 lm (26 ...

We propose a theoretical model to describe the strain-induced linear electro-optic (Pockels) effect in centro-symmetric crystals. The general formulation is presented and the specific case of the strained silicon is investigated in detail because of its attractive properties for integrated optics. The outcome of this analysis is a linear relation between the second order susceptibility tensor a...