We have directly measured the absolute efficiency of the 9.8-eV M -band luminescence from the decay of Ar2* excimers in solid Ar bombarded by 1.5-MeV He 1 and 10–50-keV H ions. About 54% of the electronic energy deposited by the projectiles is converted to 9.8-eV luminescence energy, or about 5.5 photons per 100-eV deposited. The efficiency is also found to be independent of ion and ion energy ...

Nanocrystalline metals demonstrate a range of fascinating properties, including high levels of mechanical strength. However, as these materials are exposed to high temperatures, it is critical to determine the grain size evolution, as this process can drastically change the mechanical properties. In this work, nanocrystalline sputtered Cu thin films with 43 +/- 2 nm grain size were produced by ...

A class of simple, (2+1)-dimensional, discrete models is reviewed, which allow us to study the evolution of surface patterns on solid substrates during ion beam sputtering (IBS). The models are based on the same assumptions about the erosion process as the existing continuum theories. Several distinct physical mechanisms of surface diffusion are added, which allow us to study the interplay of e...

By combining classical molecular dynamics simulations and density-functional-theory total-energy calculations, we study the possibility of doping graphene with B and N atoms using low-energy ion irradiation. Our simulations show that the optimum irradiation energy is 50 eV with substitution probabilities of 55% for N and 40% for B. We further estimate probabilities for different defect configur...

Molecular dynamics simulations, in which atomic and molecular solids are bombarded by Arn (n = 60-2953) clusters, are used to explain the physics that underlie the "universal relation" of the sputtering yield Y per cluster atom versus incident energy E per cluster atom (Y/n vs E/n). We show that a better representation to unify the results is Y/(E/U0) versus (E/U0)/n, where U0 is the sample coh...

Graphene is an ideal thin membrane substrate for creating molecule-scale devices. Here we demonstrate a scalable method for creating extremely small structures in graphene with atomic precision. It consists of inducing defect nucleation centers with energetic ions, followed by edge-selective electron recoil sputtering. As a first application, we create graphene nanopores with radii as small as ...

An important issue in the acceleration of Uat the forthcoming FAIR/GSI [1] is the projectile electron loss in the collision with the rest gas atoms(molecules). It can lead to degraded focusing and loss of the beam to the walls. These charge-changed fast ions strike the accelerator container walls and give rise to sputtering and activation of the surface. Evidently, it is important to study the ...

Electrical resistance is a material property that usually varies enormously with temperature. Constant electrical resistivity over large temperature range has been rarely measured in a single solid. Here we report the growth of Cu3NMx (M = Cu, Ag, Au) compound films by magnetron sputtering, aiming at obtaining single solids of nearly constant electrical resistance in some temperature ranges. Th...

We propose a model for the emission of large clusters (N P 5) under ion bombardment of metals. In the frame of this model, the relative cluster yields have been calculated as a function of the number of atoms in the cluster for the sputtering of Al, Ag, Ta and Nb targets by atomic and polyatomic ions with energies of several keV/atom. The calculated data have shown a very good agreement with ex...

In this work we report a study on the structure, optical and electrical properties of P, Sb and Al implanted ZnO thin films that had been produced by r.f. magnetron sputtering. The influence of the different replacing atoms on the structure and properties of the films has been explored. Looking for the best annealing conditions, two different annealing temperatures (300 degrees C and 500 degree...