نتایج جستجو برای: single electron tunneling

تعداد نتایج: 1162844  

2015
D. R. Schmid P. L. Stiller A. K. Hüttel

In single electron tunneling through clean, suspended carbon nanotube devices at low temperature, distinct switching phenomena have regularly been observed. These can be explained via strong interaction of single electron tunneling and vibrational motion of the nanotube. We present measurements on a highly stable nanotube device, subsequently recorded in the vacuum chamber of a dilution refrige...

1996
D. C. Ralph C. T. Black M. Tinkham

We report the fabrication of single-electron tunneling transistors consisting of a single nmscale aluminum particle connected via tunnel junctions to two leads and capacitively coupled to a third gate electrode. We have used these devices to measure the spectra of discrete electronic quantum energy levels in the particle while tuning the number of electrons it contains. c © 1996 Academic Press ...

2001
Jaap Hoekstra Janaina Guimaraes

To benefit from the reduction of the devices’ feature sizes new circuit concepts can be introduced. These new circuits will require new devices, such as singleelectronic devices. Single-electronics devices are capable of controlling the transport of only one electron. In this manner, the charge transfer through the device is quantized. However, single-electronics is still a highly experimental ...

2010
A. N. Chaika S. S. Nazin V. N. Semenov S. I. Bozhko O. Lübben S. A. Krasnikov K. Radican I. V. Shvets

We report on scanning tunneling microscopy (STM) studies performed with single crystalline W[001] tips on a graphite(0001) surface. Results of distance-dependent STM experiments with sub-̊angström lateral resolution and density functional theory electronic structure calculations show how to controllably select one of the tip electron orbitals for highresolution STM imaging. This is confirmed by ...

Journal: :Scientific Reports 2021

Abstract We study quantum transport in a single molecular transistor which the central region consists of single-level dot and is connected to two metallic leads that act as source drain respectively. The considered be under influence electron–electron electron–phonon interactions. placed on an insulating substrate acts heat reservoir interacts with phonon giving rise damping effect dot. intera...

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