نتایج جستجو برای: silv

تعداد نتایج: 891  

2016
Svitlana V. Marchenko Oleksandr O. Soldatkin Berna Ozansoy Kasap Burcu Akata Kurc Alexei P. Soldatkin Sergei V. Dzyadevych

In the work, silicalite particles were used for the surface modification of pH-sensitive field-effect transistors (pH-FETs) with the purpose of developing new creatinine-sensitive biosensor. Creatinine deiminase (CD) adsorbed on the surface of silicalite-coated pH-FET served as a bioselective membrane. The biosensor based on CD immobilized in glutaraldehyde vapor (GA) was taken as control. The ...

2007
Boyan Obreshkov Uwe Thumm James R. Macdonald

We calculated the electronic structure of the unreconstructed Si(100) surface within an extended screened Thomas-Fermi pseudopotential method [1]. We derive an effective electronic potential (Fig. 1) from which we obtain singleparticle Kohn-Sham orbitals and their energies. Our calculated density of states (DOS) is in good agreement with the observed DOS from photoemission measurements on Si su...

2011
Barbara Terheiden Jan Hensen Andreas Wolf Renate Horbelt Heiko Plagwitz Rolf Brendel

We demonstrate for the first time the successful layer transfer of an epitaxially grown monocrystalline Si film from a purely chemically etched porous Si substrate of 150 mm diameter to a glass carrier. The surface conditioning for all Si layer transfer processes based on porous Si has been, up to now without exception, carried out by electrochemical etching. In contrast, our chemical stain etc...

Journal: :Physical review letters 2011
D B Cassidy T H Hisakado H W K Tom A P Mills

We have observed that the amount of positronium (Ps) emitted from the surface of p-Si(100) is substantially increased if the sample is irradiated with 532 nm laser light just prior to the implantation of positrons. The energy of the emitted Ps has a constant value of ∼0.16  eV and is independent of the Si temperature and the applied laser fluence, while the photoemission yield depends on both o...

Journal: :The journal of physical chemistry. B 2005
Lauren J Webb E Joseph Nemanick Julie S Biteen David W Knapp David J Michalak Matthew C Traub Ally S Y Chan Bruce S Brunschwig Nathan S Lewis

Hydrogen-terminated, chlorine-terminated, and alkyl-terminated crystalline Si(111) surfaces have been characterized using high-resolution, soft X-ray photoelectron spectroscopy from a synchrotron radiation source. The H-terminated Si(111) surface displayed a Si 2p(3/2) peak at a binding energy 0.15 eV higher than the bulk Si 2p(3/2) peak. The integrated area of this shifted peak corresponded to...

1998
N. Wang Y. H. Tang Y. F. Zhang C. S. Lee S. T. Lee

Nucleation and growth of Si nanowires by laser ablation and thermal evaporation of Si powder sources mixed with SiO2 have been investigated by means of transmission electron microscopy. At the initial nucleation stage, Si oxide vapor condensed on the substrate and formed Si nanoparticles ~the nuclei of nanowires!. Each Si nanowire nucleus consisted of a polycrystalline Si core containing a high...

Journal: :The Journal of chemical physics 2007
Daniel J Cole Mike C Payne Gábor Csányi S Mark Spearing Lucio Colombi Ciacchi

We have developed a classical two- and three-body interaction potential to simulate the hydroxylated, natively oxidized Si surface in contact with water solutions, based on the combination and extension of the Stillinger-Weber potential and of a potential originally developed to simulate SiO(2) polymorphs. The potential parameters are chosen to reproduce the structure, charge distribution, tens...

2014
R. Nikolic A. Conway R. Radev Q. Shao L. Voss T. Wang J. Brewer C. Cheung L. Fabris C. Britton M. Ericson

Solid state thermal neutron detectors are desirable for replacing the current He based technology, which has some limitations arising from stability, sensitivity to microphonics and the recent shortage of He. Our approach to designing such solid state detectors is based on the combined use of high aspect ratio silicon PIN pillars surrounded by B, the neutron converter material. To date, our hig...

Journal: :Acta crystallographica. Section A, Foundations of crystallography 2001
A Kirfel H G Krane P Blaha K Schwarz T Lippmann

The electron-density distribution of the high-pressure polymorph of SiO2, stishovite [a = 4.177 (1), c = 2.6655 (5) A, space group P4(2)/mnm, Z = 2], has been redetermined by single-crystal diffractometry using synchrotron radiation of 100.42 and 30.99 keV, respectively, in order to obtain essentially absorption- and extinction-free data. Room-temperature diffraction experiments on two samples ...

Journal: :Physical review letters 2008
Y Pan F Inam M Zhang D A Drabold

Exponential band edges have been observed in a variety of materials, both crystalline and amorphous. In this Letter, we infer the structural origins of these tails in amorphous and defective crystalline Si by direct calculation with current ab initio methods. We find that exponential tails appear in relaxed models of diamond silicon with suitable extended defects that emerge from relaxing point...

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