نتایج جستجو برای: silicon containing membrane

تعداد نتایج: 783331  

2014
Kazumasa Yamada Shinya Yoshikawa Mutsuo Ichinomiya Akira Kuwata Mitsunobu Kamiya Kaori Ohki

The order Parmales (Heterokontophyta) is a group of small-sized unicellular marine phytoplankton, which is distributed widely from tropical to polar waters. The cells of Parmales are surrounded by a distinctive cell wall, which consists of several siliceous plates fitting edge to edge. Phylogenetic and morphological analyses suggest that Parmales is one of the key organisms for elucidating the ...

Journal: :Fizika i tehnika poluprovodnikov 2022

We carried out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen plasma activation on hybrid substrate containing silicon carbide and porous silicon. Using X-ray diffractometry, Raman photoluminescence spectroscopy, it is shown that thin films formed have minimal residual stresses intense photoluminescence.

Journal: :Japanese Journal of Applied Physics 2022

Abstract This study demonstrated a polycrystalline-silicon (poly-Si)-based double-gate (DG) ion-sensitive field-effect transistors (DG-ISFETs) using APTES/SiO2 stack-sensing membrane. The membrane enhanced the single-gate (SG) sensitivity, and suppressed hysteresis. DG structure was preferred to have capacitive coupling effect amplify sensitivity of ISFETs. sensitivities SG- DG-ISFETs were appr...

2002
Kyutae Yoo J.-L. A. Yeh N. C. Tien

This paper reports a new approach to the fabrication of 3D structured diaphragms using integrated surface and deep reactive ion etching (DRIE) bulk silicon micromachining on a silicon-on-insulator (SOI) wafer. The fabrication process has been applied to a 1 mm × 2 mm × 1.2 μm diaphragm designed for a biomimetic directional microphone. The membrane has two 200 μm × 380 μm × 20 μm silicon proof m...

2002
Nae-Man Park Suk-Ho Choi Seong-Ju Park

Electron charging and discharging were produced in metal-insulator-semiconductor structures containing amorphous silicon quantum dots ~a-Si QDs! by increasing the applied voltage in a stepwise fashion without changing its sign. The metal-insulator-semiconductor structure was fabricated using an insulating silicon nitride film containing a-Si QDs by plasma-enhanced chemical vapor deposition. Thi...

2004
H. J. Quenzer

This paper presents for the first time the preparation of glass layers, suitable for the anodic bonding of two silicon substrates using a spin-on glass. In this process a liquid sol solution is used within a spin coating process. The solution is a mixture based on silica sol, organic silicon containing compounds, like TEOS (Tetraethylorthosilicate), and a sodium salt all dissolved in ethanol. A...

Journal: :Optics express 2016
L Shen Y Jiao W Yao Z Cao J P van Engelen G Roelkens M K Smit J J G M van der Tol

A uni-traveling carrier photodetector (UTC-PD), heterogeneously integrated on silicon, is demonstrated. It is fabricated in an InP-based photonic membrane bonded on a silicon wafer, using a novel double-sided processing scheme. A very high 3 dB bandwidth of beyond 67 GHz is obtained, together with a responsivity of 0.7 A/W at 1.55 μm wavelength. In addition, open eye diagrams at 54 Gb/s are obs...

Journal: :Analytical chemistry 2004
Sunia A Trauger Eden P Go Zhouxin Shen Junefredo V Apon Bruce J Compton Edouard S P Bouvier M G Finn Gary Siuzdak

Silylation chemistry on porous silicon provides for ultrahigh sensitivity and analyte specificity with desorption/ionization on silicon mass spectrometry (DIOS-MS) analysis. Here, we report that the silylation of oxidized porous silicon offers a DIOS platform that is resistant to air oxidation and acid/base hydrolysis. Furthermore, surface modification with appropriate hydrophobic silanes allow...

Journal: :European Physical Journal-applied Physics 2021

Mechanical properties of a nanomechanical resonator significantly impact the performance resonant Nano-electromechanical system (NEMS) device. We study mechanical suspended membranes fabricated out low-pressure chemical vapor deposited silicon nitride thin films. doubly-clamped with thickness less than 50 nm and length varying from 5 to 60 μm. The elastic modulus stress in were measured using A...

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