نتایج جستجو برای: silicon carbide particle

تعداد نتایج: 258289  

Journal: :Nanotechnology 2016
Filippo Giannazzo

Graphene (Gr) is currently the object of intense research investigations, owing to its rich physics and wide potential for applications. In particular, epitaxial Gr on silicon carbide (SiC) holds great promise for the development of new device concepts based on the vertical current transport at Gr/SiC heterointerface. Precise tailoring of Gr workfunction (WF) represents a key requirement for th...

2016
Yingjie Xu Tian Gao

Carbon fiber-reinforced multi-layered pyrocarbon-silicon carbide matrix (C/C-SiC) composites are widely used in aerospace structures. The complicated spatial architecture and material heterogeneity of C/C-SiC composites constitute the challenge for tailoring their properties. Thus, discovering the intrinsic relations between the properties and the microstructures and sequentially optimizing the...

Journal: :Optics express 2013
Marina Radulaski Thomas M Babinec Sonia Buckley Armand Rundquist J Provine Kassem Alassaad Gabriel Ferro Jelena Vučković

We present the design, fabrication, and characterization of high quality factor (Q ~10(3)) and small mode volume (V ~0.75 (λ/n)(3)) planar photonic crystal cavities from cubic (3C) thin films (thickness ~200 nm) of silicon carbide (SiC) grown epitaxially on a silicon substrate. We demonstrate cavity resonances across the telecommunications band, with wavelengths from 1.25 - 1.6 μm. Finally, we ...

2016
Alexander G. Boosalis Alexander George Boosalis Mathias Schubert Tino Hofmann

Ellipsometry has long been a valuable technique for the optical characterization of layered systems and thin films. While simple systems like epitaxial silicon dioxide are easily characterized, complex systems of silicon and carbon junctions have proven difficult to analyze. Traditional model dielectric functions for layered silicon homojunctions, a system with a similar structure to modern tra...

2005
Grégory Pandraud Hoa T. M. Pham Lukasz S. Pakula Pasqualina M. Sarro

Planar silicon carbide (SiC) waveguides are proposed for fabrication on a silicon substrate with a oxide isolation layer. Using post deposition annealing it is possible to achieve low Polarization-Dependent Loss (PDL) within optical SiC waveguides fabricated using a low temperature deposition technique. Those waveguides have been successfully used in power splitters and cantilivers. These first...

1993
R. G. Munro S. J. Dapkunas

The present work is a review of the substantial effort that has been made to measure and understand the effects of corrosion with respect to the properties, performance, and durability of various forms of silicon carbide and silicon nitride. The review encompasses corrosion in diverse environments, usually at temperatures of 1000 °C or higher. The environments include dry and moist oxygen, mixt...

Journal: :The Journal of chemical physics 2013
Simone Taioli Giovanni Garberoglio Stefano Simonucci Silvio a Beccara Lucrezia Aversa Marco Nardi Roberto Verucchi Salvatore Iannotta Maurizio Dapor Dario Alfè

In this work, we investigate the processes leading to the room-temperature growth of silicon carbide thin films by supersonic molecular beam epitaxy technique. We present experimental data showing that the collision of fullerene on a silicon surface induces strong chemical-physical perturbations and, for sufficient velocity, disruption of molecular bonds, and cage breaking with formation of nan...

Journal: :International Journal of Applied Ceramic Technology 2021

This paper reviews investigations of silicon nitride–silicon carbide micro–nanocomposites from the original work Niihara, who proposed concept structural ceramic nanocomposites, to more recent on strength and creep resistance these unique materials. Various different raw materials are described that lead formation nanosized SiC within Si3N4 grains (intragranular) at grain boundaries (intergranu...

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