We utilize the recently suggested capture-emission-time (CET) maps [1] for the first time for SiC technologies. CET maps are a very powerful characterization technique which allow the elegant and comprehensive analysis of oxide/interface traps at or near the semiconductor-dielectric interface and were originally developed to characterize degradation of Si based MOSFETs. For asprocessed SiC MOSF...

This paper investigates the impact of silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) on the dynamic performance of permanent magnet synchronous motor (PMSM) drive systems. The characteristics of SiC MOSFETs are evaluated experimentally taking into account temperature variations. Then the switching characteristics are firstly introduced into the transfer funct...

The emergence of silicon carbide(SiC-) based power semiconductor switches, with their superior features compared with silicon(Si-) based switches, has resulted in substantial improvement in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high-voltage power...

Growth of 3C or 6H-SiC epilayers on low off-axis 6H-SiC substrates can be mastered by changing the size of the on axis plane formed by long terraces in the epilayer using geometrical control. The desired polytype can be selected in thick (~200 μm) layers of both 6H-SiC and 3C-SiC polytypes on substrates with off-orientation as low as 1.4 and 2 degrees. The resultant crystal quality of the 3C an...

This paper investigates the benefits of successive interference cancellation (SIC) based detectors over linear detectors. MIMO receiver with SIC, is simulated using two different modulation schemes namely BPSK and 16QAM modulation methods. The receiver design is less complex in nature. The simulation results obtained at Signal processing laboratory shows that by combining SIC with MMSE or SIC w...

in this work, a novel electrochemical technique is presented for determination of bentazonusing a nanocomposite based sensor and continuous coulometric fast fourier transformation cyclicvoltammetry (ccfftcv). in this method, the sensor response is in coulomb and is calculated based onintegrating charge changes under the current voltammogram in selected potential range. the new sensor wasconstru...

This study investigates the wear resistance of four AA6061 MMCs together with the monolithic AA6061 alloy, all in the T6 condition, using a pin-on-disc test. In addition to the widely studied 20 vol.% Saffil MMCs, the present investigation considered a hybrid of 11% Saffil + 20% Sic, and a high volume fraction Sic, MMC. AA6061 + 60% Sic,. The wear behaviour against P400 Sic grit adhesive bonded...

Computational simulations on the thermal analysis of metal matrix composite (MMC) composed of Al and SiC were performed in extended areas of SiC volume fraction. Due to the experimental limitations, only the narrow range of SiC volume fraction has been examined. Through the simulation, which enables current experimental situation to extend, we attempted to explore the dependencies of thermal an...

Flexible paper-like semiconductor nanowire materials are expected to meet the criteria for some emerging applications, such as components of flexible solar cells, electrical batteries, supercapacitors, nanocomposites, bendable or wearable electronic or optoelectronic components, and so on. As a new generation of wide-bandgap semiconductors and reinforcements in composites, SiC nanowires have ad...