A reconfigurable optical add-drop multiplexer as well as a 1x4x4 reconfigurable λ router, designed for use in the second telecom window, are demonstrated. The devices that each have a footprint less than 2 mm are based on thermally tunable vertically coupled microring resonators fabricated in Si3N4/SiO2.

The generation of an octave spanning supercontinuum covering 488-978 nm (at -30  dB) is demonstrated for the first time on-chip. This result is achieved by dispersion engineering a 1-cm-long Si3N4 waveguide and pumping it with an 100-fs Ti:Sapphire laser emitting at 795 nm. This work offers a bright broadband source for biophotonic applications and frequency metrology.

We have developed low-temperature surface micromachining procedures for the fabrication of suspended SiO2 /Si3N4 membranes. This fabrication method was integrated with electron beam lithography, anisotropic ion etching, and electroplating to construct electrostatically deflectable tunnel transducers. We show the structures and some preliminary measurements on the performance of these monolithic...

We propose a novel and highly sensitive integrated read-out scheme, capable of detecting sub-nanometre deflections of a cantilever in close proximity to a grated waveguide structure. We discuss modelling results for an SiO2 cantilever to be integrated with an optical cavity defined by a grated Si3N4 waveguide.

The compatibility of memristor materials with advanced complementary metal-oxide-semiconductor (CMOS) technology is a key factor for microelectronics element base manufacturing. Therefore, we continued studying previously fabricated CMOS-compatible Ni/Si3N4/SiO2/p+-Si samples. We approximated volt-ampere characteristics (VAC) at different temperatures using the general form spatial charge-limit...

Lithium niobate on insulator (LNOI) has been demonstrated as a promising platform for photonic integrated circuits (PICs), thanks to its excellent properties such strong electro-optic effect, low material loss, and wide transparency window. Herein, monolithic PIC high-speed data communication application lithium-niobate-etchless with silicon nitride (Si3N4) loading is proposed demonstrated. The...

2014 Introduction of a thin Si3N4 layer in metal-Al2O3-SiO2-Si (MAOS) memory structures leads to increased charge storage capability and reduced writing voltages for these MANOS structures. O2 annealing significantly affects these properties and the charging mechanism. Preliminary results on charge retention are presented. REVUE DE PHYSIQUE APPLIQUÉE TOME 13, DÉCEMBRE 1978,

We report ultra-broadband supercontinuum generation in high-confinement Si3N4 integrated optical waveguides. The spectrum extends through the visible (from 470 nm) to the infrared spectral range (2130 nm) comprising a spectral bandwidth wider than 495 THz, which is the widest supercontinuum spectrum generated on a chip.

A brief survey is given of the thermochemistry of a number of silicon-containing substances that are of interest in modern technology. Among those discussed are: silicalite (SiO2), silicon disulfide (SiS2), the crystalline and vitreous forms of silicon diselenide (SiSen), silicon sesquitelluride (Si2Te3), silicon nitride (Si3N4), and vanadium disilicide (VSi2).