We report on the fabrication and characterization of a new device, named IRIS. It is designed to increase the coherent optical bandwidth of a picosecond pulse train for subsequent pulse compression. The IRIS device consists of a concatenated array of semiconductor optical amplifiers and saturable absorbers. It is realized in the InP/InGaAsP material system for the 1550 nm range. Measurements on...

A field trial of 4K uncompressed streaming over 80 (8λ x 10) Gbps colored optical packet switching network with SOA based broadcast-and-select switch and stacked optical-code (OC) label processing is reviewed. Introduction “4K” motion pictures (3840x2048 pixels), which is 4 times pixel counts of high-definition (HD), are promising imaging technology for digital cinema, computer visualization, a...

Optical amplifiers are important elements of photonic integrated circuits. We present a hybrid silicon evanescent amplifier utilizing a wafer bonded structure of silicon waveguide and AlGaInAs quantum wells. A chip gain of 13 dB with a power penalty of 0.5 dB at 40 Gb/s data amplification is demonstrated. ©2006 Optical Society of America OCIS codes: (250.5980) Semiconductor optical amplifiers; ...

This article presents, for the first time, the derivation of approximate analytical formulae for the probability density function and the cumulative density function of the optical signal-to-noise ratio variation in optical local and metropolitan area networks due to the weakly polarization-dependent gain of cascaded semiconductor optical amplifiers. The cumulative density function is used to c...

We demonstrate for the first time a field trial of 80 (10 x 8) Gbps colored optical packet switching of 4K and 2K uncompressed streaming using SOA based broadcast-and-select switch and optical-code label processing. Introduction “4K” motion pictures (3840x2160 pixels), 4 times pixel counts of high-definition (HD), are promising imaging technology for digital cinema, computer visualization, and...

In monolithic photonic integrated circuits (PICs), an optimized active/passive integration is needed to provide efficient coupling and low amount of interface reflections between amplifiers passive components. A 1300 nm semiconductor optical amplifier (SOA) on InP substrate for butt-joint investigated. Material performance were assessed from measurements broad area lasers. Room temperature oper...

We report on an optical frequency comb with 14 nm (∼1.8  THz) spectral bandwidth at a -3  dB level that is generated using a passively mode-locked quantum-well laser in photonic integrated circuits fabricated through an InP generic photonic integration technology platform. This 21.5-GHz colliding-pulse mode-locked laser cavity is defined by on-chip reflectors incorporating intracavity phase mod...

Introduction: One of the key components in all-optical communication networks using the whole low-loss bandwidth of the silica fibre is an ultra-wideband wavelength converter [1]. Use of all-optical ultrawideband wavelength converters enhances network flexibility, allowing an all-optical wavelength conversion between different transmission windows, and therefore avoiding the bottleneck of optic...