We report a fully integrated serial-link receiver with optical interface fabricated with a 0.18 mm complementary metal oxide semiconductor technology for long-haul display interconnects. The receiver includes a trans-impedance amplifier, a limiting amplifier, a clock and data recovery circuit, 1:64 de-multiplexer and a built-in error checker. The receiver produces 64-bit wide electrical signals...

The field of optics has a drastic impact in the field of electronics and communication. With the rising need for higher data transfer rate, optical advancements have served this purpose. Optical amplifiers play a crucial role in the amplification of signal at regular intervals to avoid loss of data. Erbium doped fiber amplifiers (Erbium Doped Fiber Amplifier) carry out the amplification by stim...

The temporal effect of optical phase conjugation in a semiconductor laser amplifier is studied numerically. The conjugate pulse has distortion and frequency chirping owing to the carrier depletion induced by the signal pulse. Both the pulse-shape distortion and frequency chirping are enhanced as the signal power and the injection current increase. We can reduce these two effects by increasing t...

We report tunable fractional delays of 250% for 700 fs pulses propagating in a 1.55 mum semiconductor optical amplifier at room temperature. This large fractional delay is attributed to a spectral hole created by the propagating pulses for pulses with duration shorter than the carrier heating relaxation time. Delay can be tuned electrically by adjusting the current with low amplitude variation ...

The outstanding features of Quantum Dot Semiconductor Optical Amplifiers (QD-SOA’s) such as all-optical signal processing and signal regeneration are caused them are widely used in the optical communication systems. Due to the nano structure of these amplifiers, accurate design and modelling of them is a complex and challenging problem. This paper addresses design a QD-SOA. We present a novel m...

We describe a 5.5W 589 nm source based on a passively mode-locked Nd:YVO4 laser and a multi-stage Lithium Triborate optical parametric amplifier seeded by a tuneable semiconductor laser. We show this system can produce rapidly tuneable, transform-limited pulses in near diffraction-limited beams at 589 nm, useful for Na guide star applications. The attraction of this scheme is that it can be ass...

A new type of optical switching device is developed. For a semiconductor laser amplifier with a shallow-etched bending ridge waveguide, the laser beam could propagate along the bending direction or the straight direction. Switching between the two directions is characterized. With the device fabricated on the substrate with two quantum wells of different widths, switching characteristics are fo...

We present an experimental investigation of a multicontact semiconductor optical amplifier. This first-generation device allows for direct control of the carrier density profile along the length of the waveguide. This is used to control the device noise figure, with a minimum value of 5 dB observed at a gain of 15 dB for an optimum carrier density profile. The opposite carrier density profile r...

We present the angular-resolved intensity noise characteristics of a resonant-cavity light-emitting diode under quiet pumping conditions. Measurements by a sensitivity-enhanced lock-in amplifier detection scheme yielded a spatial anticorrelation between the intensity noise of the central and peripheral parts of the emitted far field. Proposals for possible explanations of this anticorrelation f...

Semiconductor Raman amplifiers are useful for frequency selection in terahertz bandwidth and wavelength division multiplexing (WDM) systems with terabit capacity, as well as direct terabit optical communication systems. We have developed GaP–AlGaP Raman waveguides with micrometer-size cross sections. We have reduced residual optical loss of the waveguide by improvement of the fabrication proces...