As miniaturized light sources of size beyond the optical diffraction limit, surface plasmon lasers are of particular interest for numerous exciting applications. Although convincing demonstrations of plasmonic lasing have been reported with the metal-insulator-semiconductor (MIS) hybrid design using semiconductor nanomaterials, it remains a challenge that conventional photonic lasing may be tri...

A semiconductor processing method for the formation of self-aligned via and trench structures in III-V semiconductor devices in particular, on InP platform is presented, together with fabrication results. As a template for such self-aligned via and trench formations in a surrounding polymer layer on a semiconductor device, we make use of a sacrificial layer that consists of either a SiO2 dielec...

We have successfully designed the geometry of the microwave cavity and the thin metal electrode, achieving resonance of the microwave cavity with the metal-insulator-semiconductor (MIS) device structure. This very simple MIS device operates in the cavity, where charge carriers are injected quantitatively by an applied bias at the insulator-semiconductor interface. The local motion of the charge...

Optical extinction by a dilute dispersion of metal nanoclusters in GaAs is calculated using the optical theorem and Maxwell-Garnet theory with complex dielectric functions for Cr, Fe, Ni, Cu, Ag, Au, Er, and As. The large dielectric function of the semiconductor host-shifts the surface plasmon resonance frequencies from the ultraviolet to the near infrared. The noble metals have well-defined re...

Metal-based plasmonics has a wide range of important applications but is subject to several drawbacks. In this paper, we propose and investigate an all-semiconductor-based approach to plasmonics in mid-infrared (MIR) wavelength range using InAs heterostructures. Our results show that InAs heterostructures are ideal for plasmonics with the shortest plasmon wavelength among common semiconductors....

The formation of a Schottky barrier at the metal-semiconductor interface is widely utilised in semiconductor devices. With the emerging of novel Schottky barrier based nanoelectronics, a further microscopic understanding of this interface is in high demand. Here we provide an atomistic insight into potential barrier formation and band bending by ab initio simulations and model analysis of a pro...

In this study, fatigue life of power semiconductor devices measured in cycles to failure during an accelerated stress test in a climate chamber is analyzed. The tested devices fail mainly in a short circuit event and their physical inspection reveals cracks in the power metallization. Commonly, the time till fracture of macroscopic metal layers is modeled with S-N or ε-N fields, this means that...

This is a review article on the current status and future prospects of the research and development on gallium oxide (Ga2O3) power devices. Ga2O3 possesses excellent material properties, in particular for power device applications. It is also attractive from an industrial viewpoint since large-size, high-quality wafers can be manufactured from a single-crystal bulk synthesized by melt–growth me...

Rigourous calculations of the imaging properties of metamaterials consisting of metal-coated semiconductor nanoparticles are presented. In particular, it is shown that under proper choice of geometric and materials parameters, arrays of such particles exhibit negative refractive index within the region of the excitonic resonance of the semiconductor. The occurrence of negative refractive index ...

The ability to send high-speed messages between integrated circuit devices requires both high-frequency receivers and transmitters. The vast majority of integrated circuits are made from silicon-based semiconductors. Suitable receivers of silicon integrated circuits can be constructed from either metal-semiconductor-metal photodiodesl or P-type, intrinsic, N-type (PIN) photodiodes. These receiv...