A semiconductor laser whose cavities are ‘‘self-formed’’ due to strong optical scattering in highly disordered gain media is demonstrated. The lasers are made of zinc oxide polycrystalline films grown on amorphous fused silica substrates. Lasing occurs at an ultraviolet wavelength of ;380 nm under optical pumping. Actual images of the microscopic laser cavities formed by multiple scattering hav...

We present a set of rate equations for the modal amplitudes and carrier-inversion moments that describe the deterministic multi-mode dynamics of a semiconductor laser due to spatial hole burning. Mutual interactions among the lasing modes, induced by high- frequency modulations of the carrier distribution, are included by carrier-inversion moments for which rate equations are given as well. We ...

Semiconductor lasers are commonly used for storage and retrieval of information in optical data recording systems. A measure of the importance of this emerging optoelectronic technology is provided by the compact-disc players that have already penetrated the consumer electronics market. The same technique is now being extended to the mass storage devices capable of storing gigabytes of informat...

We studied a metasurface constituted as a periodic array of semiconductor split-ring resonators. The resonance frequencies of the metasurface excited by normally incident light were found to be continuously tunable in the terahertz regime through an external magnetostatic field of suitable orientation. As such metasurfaces can be assembled into 3D metamaterials, the foregoing conclusion also ap...

A discussion of three topics in the eld of non linear optics is presented We begin with the Colliding Pulse Mode locked CPM Quantum Well QW laser A large signal model consisting of a wave propagation equation for the electrical eld and a rate equation model for the material response is derived The wave propagation equation of the electrical eld is derived from Maxwell s equations in the slowly ...

In a standard semiconductor laser, electrons and holes recombine via stimulated emission to emit coherent light, in a process that is far from thermal equilibrium. Exciton-polariton condensates-sharing the same basic device structure as a semiconductor laser, consisting of quantum wells coupled to a microcavity-have been investigated primarily at densities far below the Mott density for signatu...

An 8ch, 400 GHz monolithically integrated WDM channel selector featuring an array of quantum well semiconductor optical amplifiers (SOA) and arrayed waveguidegrating demultiplexer is presented. Reduction of fabrication complexity was achieved by using a single step selective area MOVPE to realize the different bandgap profiles for the SOA array and passive region. The selective growth mask dime...