This paper deals with a proposing a new approach to specify corner points coordinates in subpixel accuracy. The describing algorithm uses the regular cornerness map obtained from the usual corner detectors as initial step. The main idea is to consider the cornerness values from a neighboring area around found corner point as a 3D profile object and to find the coordinates of its centroid. The p...

Page-oriented data storage systems incorporate optical detector arrays [such as complementary metal-oxide semiconductor (CMOS) arrays] in order to read data images. For laboratory demonstrations the detector array is typically pixel matched to the data image [Opt. Lett. 22, 1509 (1997)]. This approach requires exceedingly high-performance optics and mechanics for the simultaneous alignment of e...

The 2112 silicon detector modules of the barrel part of the ATLAS SemiConductor Tracker (SCT) have been mounted on their carbon fibre support structure. Module insertion, placement and fixing were performed by robotic assembly tooling. We report on our experience with this assembly method. Part of the mounting sequence involves a partial survey of elements of the support structure which is need...

We review our recent progress on the fabrication of near-infrared photodetectors based on intersubband transitions in AlN/GaN superlattice structures. Such devices were first demonstrated in 2003, and have since then seen a quite substantial development both in terms of detector responsivity and high speed operation. Nowadays, the most impressive results include characterization up to 3 GHz usi...

Ultrashort pulse light-matter interactions in a semiconductor are investigated within the regime of resonant optical rectification. Using pulse envelope areas of around 1.5-3.5 pi, a single-shot dependence on carrier-envelope-offset phase (CEP) is demonstrated for 5 fs pulse durations. A characteristic phase map is predicted for several different frequency regimes using parameters for thin-film...

6630: " ere's plenty of room at the top ") and carried out at the Semiconductor e cover shows images of UV light recorded with a Timepix chip (chapter 5). To do this an InGrid detector structure and a CsI photocathode have been post-processed onto the IC. e background that is used on the cover is an image of patterns in porous alumina, a material that has been investigated for the structures...

The need for radiation hard semiconductor detectors for the tracker regions in high energy physics experiments at a future high luminosity hadron collider, like the proposed LHC upgrade, has led to the formation of the CERN RD50 collaboration. The R&D directions of RD50 follow two paths: the optimization of radiation hard bulk materials (Material Engineering) and the development of new detector...

Non-contact optical methods can be used for sub micron surface thermal characterization of active semiconductor devices. Point measurements were first made, and then real time thermal images were acquired with a specialized PINarray detector. This method of thermal imaging can have spatial resolution better than the diffraction limit of an infrared camera and can work in a wide range of ambient...

When in vivo proton dosimetry is performed with a metal-oxide semiconductor field-effect transistor (MOSFET) detector, the response of the detector depends strongly on the linear energy transfer. The present study reports a practical method to correct the MOSFET response for linear energy transfer dependence by using a simplified Monte Carlo dose calculation method (SMC). A depth-output curve f...

The PANDA Experiment at FAIR will include a MicroVertex-Detector (MVD) for tracking and vertexing. The MVD will be composed of silicon pixel detectors and double-sided silicon strip detectors. The strip part will contain approximately 200,000 channels that need to be read out with highly integrated front-ends. A specific feature of the PANDA detector is the data acquisition concept [1]. Contrar...