نتایج جستجو برای: seed layer

تعداد نتایج: 357436  

Journal: :Brazilian journal of biology = Revista brasleira de biologia 2016
R O Xavier J G Alday R H Marrs D M S Matos

The native bracken (Pteridium arachnoideum) often occurs in mono-specific stands in the Brazilian Cerrado, and this dominance can impact on both the above-ground vegetation and soil seed bank. This study investigated how invasion by this species over a 20-year period changed the seed bank and the relationship between the seed bank and litter mass. We extracted soil samples from three replicated...

2017
Gonzalo Murillo Helena Lozano Joana Cases-Utrera Minbaek Lee Jaume Esteve

This paper presents a study about the dependence of the hydrothermal growth of ZnO nanowires (NWs) with the passivation level of the active surface of the Au catalyst layer. The hydrothermal method has many potential applications because of its low processing temperature, feasibility, and low cost. However, when a gold thin film is utilized as the seed material, the grown NWs often lack morphol...

Journal: :Plant physiology 1973
L B Lowe S K Ries

Seed of a Mexican semidwarf wheat (Triticum aestivum L. cv. Inia 66), was obtained from a nitrogen fertilizer field trial grown in Mexico. A high positive correlation was obtained between seed protein content and seedling dry weight after 3 weeks growth (r = +0.92(**)). The seedling dry weight was positively related to the protein content of the aleurone layer and endosperm, but not to the embr...

Journal: :Annals of botany 2016
Amjad Iqbal Janice G Miller Lorna Murray Ian H Sadler Stephen C Fry

BACKGROUND AND AIMS Cress-seed (Lepidium sativum) exudate exerts an allelochemical effect, promoting excessive hypocotyl elongation and inhibiting root growth in neighbouring Amaranthus caudatus seedlings. We investigated acidic disaccharides present in cress-seed exudate, testing the proposal that the allelochemical is an oligosaccharin-lepidimoic acid (LMA; 4-deoxy-β-l-threo-hex-4-enopyranuro...

Journal: :Nanoscale 2015
Abhay A Sagade Daniel Neumaier Daniel Schall Martin Otto Amaia Pesquera Alba Centeno Amaia Zurutuza Elorza Heinrich Kurz

The sensitivity of graphene based devices to surface adsorbates and charge traps at the graphene/dielectric interface requires proper device passivation in order to operate them reproducibly under ambient conditions. Here we report on the use of atomic layer deposited aluminum oxide as passivation layer on graphene field effect devices (GFETs). We show that successful passivation produce hyster...

2012
Wan Sik Hwang Luke O. Nyakiti Virginia D. Wheeler Rachael. L. Myers-Ward C. R. Eddy Kurt Gaskill Huili Xing Alan Seabaugh Debdeep Jena

Top-gated epitaxial graphene nanoribbon (EGNR) field effect transistors (FETs) were fabricated on epitaxial graphene substrates which demonstrated the opening of a substantial bandgap. Hydrogen silsesquioxane (HSQ) was used for the patterning of 10 nm size linewidth as well as a seed layer for atomic layer deposition (ALD) of a high-k dielectric aluminum oxide (Al2O3). It is found that the reso...

2017
Wei Li Yuanjun Guo Yongliang Tang Xiaotao Zu Jinyi Ma Lu Wang Yongqing Fu

Using a seed layer-free hydrothermal method, ZnO nanorods (NRs) were deposited on ST-cut quartz surface acoustic wave (SAW) devices for ammonia sensing at room temperature. For a comparison, a ZnO film layer with a thickness of 30 nm was also coated onto an ST-cut quartz SAW device using a sol-gel and spin-coating technique. The ammonia sensing results showed that the sensitivity, repeatability...

2004
Neelima Paul Hidehito Asaoka Josef Mysliveček Bert Voigtländer

We compare the initial stages of growth of Ge on Si~111! with Bi as a surfactant and without surfactant. At the beginning of growth, three-dimensional islands with a strain relieving dislocation network at their base are formed in both growth systems. These islands can be regarded as seeds of a flat relaxed Ge layer on Si~111!. However, such Ge layer forms at later stages of growth only in the ...

2016
Yao Liu Ying Wang Baolai Liang Qinglin Guo Shufang Wang Guangsheng Fu Yuriy I. Mazur Morgan E. Ware Gregory J. Salamo Paul J. Simmonds

Carrier transfer in vertically-coupled InAs/GaAs quantum dot (QD) pairs is investigated. Photoluminescence (PL) and PL excitation spectra measured at low temperature indicate that the PL peak intensity ratio between the emission from the two sets of QDs—i.e., the relative population of carriers between the two layers of QDs—changes with increasing excitation intensity. Temperature-dependent PL ...

2006
M C Elwenspoek

Nickel thin films have been electrodeposited without the use of an additional seed layer, on highly doped silicon wafers. These substrates conduct sufficiently well to allow deposition using a peripherical electrical contact on the wafer. Films 2 μm thick have been deposited using a nickel sulfamate bath on both n+and p+-type silicon wafers, where a series of trenches with different widths had ...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید