A new type of ultraviolet (UV) light sensor based on film bulk acoustic wave resonator (FBAR) is proposed. The new sensor uses gold and a thin n-type ZnO layer deposited on the top of piezoelectric layer of FBAR to form a Schottky barrier. The Schottky barrier's capacitance can be changed with UV light, resulting in an enhanced shift in the entire FBAR's resonant frequency. The fabricated UV se...

We report the fabrication of both n-type and p-type WSe2 field-effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Our transport measurements reveal intrinsic channel properties including a metal-insulator transition at a characteristic conductivity close to the quantum conductance e(2)/h, a high ON/OFF ratio of >10(7) at 170 K, and...

This paper reports the design, fabrication and characterization of high voltage 4H-SiC merged PiN/Schottky-barrier (MPS) diodes with an active area of 1.4mm. For comparison purposes, Schottky barrier, PiN and MPS diodes of smaller size (8.1x10mm) have also been designed and fabricated on the same wafer with a 30μm, n=2x10cm doped drift layer. The Schottky spacing between the adjacent p+ regions...

In this paper, we demonstrate an active control of the charge state of a single nitrogen-vacancy (NV) centre by using in-plane Schottky-diode geometries with aluminium on hydrogen-terminated diamond surface. A switching between NV(+), NV(0) and NV(-) can be performed with the Al-gates which apply electric fields in the hole depletion region of the Schottky junction that induces a band bending m...

SiC Schottky Barrier diodes (SiC-SBD) are known to oscillate/ring in the output terminal when used as free-wheeling diodes in voltage source converters. This ringing is due to RLC resonance between the diode capacitance, parasitic resistance and circuit stray inductance. In this paper, a model has been developed for calculating the switching energy of SiC diodes as a function of the switching r...

eGaN FETs have repeatedly demonstrated higher efficiency than MOSFETs in wireless power transfer amplifiers when operated over a wide impedance range using a ZVS Class D amplifier [1, 2, 3, 4, 5, 6, 7, and 8]. In this article we examine a method to further improve the performance of eGaN FETs by replacing the bootstrap diode of the high side gate driver with an eGaN FET that is driven synchrono...

A new method for extracting the series resistance and thermal resistance of a Schottky diode is presented. The method avoids the inaccuracies caused by the temperature dependence of the saturation current and ideality factor. These are a major concern for traditional extraction methods, especially when the diode under test has a submicrometer anode diameter and is significantly heated up by the...

SensL C-, Jand R-Series SiPM sensors have a fast, capacitively coupled output that gives a high speed output signal, which is suitable for timing applications. Summing the fast output directly is not recommended as this would negatively affect the resulting signal. By introducing a diode pair (fast Schottky) as shown in Figure 1, the Fast signal from the active SiPM is transferred to the Common...

This paper focuses on using high temperature operating capability of SiC power devices, which are packaged in power modules. A SiC Schottky barrier diode is mounted on an active metal brazed Si3N4 substrate as a heat resistive power module. The temperature dependency of electrical characteristics of the SiC device and thermal dynamics of the power module are modeled for numerical electro therma...

This paper presents the design, implementation and characterization of a rectenna array for wireless powering of sensor electronics for airframe fatigue detection. The rectenna aperture is powered 5 minutes at a time during inspection with a requirement of ±15V at 100mW. The maximum incident RF power is 10mW/cm. A single rectenna element at this incident power density has an output power of 5 m...