We use rigid analytic uniformization by Schottky groups to give a bound for the order of the abelian subgroups of the automorphism group of a Mumford curve in terms of its genus.

Schottky structures based on Mg-doped GaN layers grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrate are studied by thermal admittance spectroscopy from 90 K to room temperature. Evidence of two impurity levels results from the analysis of the observed peaks in the conductance curves, whose positions and strengths are temperature dependent. The experimental results are...

In this work we have investigated the performance of Schottky photodetectors based on materials nonconventionally used to detect near-infrared wavelengths. In the proposed devices the absorption mechanism is based on the internal photoemission effect. Both three-dimensional (sputtered erbium and evaporated germanium) and two-dimensional materials (graphene) have been considered and their perfor...

We reported that the resistive switching of Ag/In-Ga-Zn-O/Pt cells exhibited self-rectifying performance at low-resistance state (LRS). The self-rectifying behavior with reliability was dynamic at elevated temperature from 303 to 393 K. The Schottky barrier originated from the interface between Ag electrode and In-Ga-Zn-O films, identified by replacing Ag electrode with Cu and Ti metals. The re...

This paper experimentally studies the temperature dependencies of current–voltage (I–V) and capacitance–voltage (C–V) characteristics of SiC power devices, and discusses the relationships between physical phenomena and the measured characteristics in SiC. Two SiC Schottky barrier diodes (SBD) with different specifications were studied for temperatures ranging from 25 to 450◦C. Their I–V charact...

Schottky Collector Resonant Tunneling Diodes (SCRTDs) have potential for increased oscillator bandwidth, but may be prone to electron reflection at the semiconductor-metal interface of the Schottky collector. This reflection has been observed previously with in-situ MBE deposited collector metal, manifested as interference oscillations on the rising slope of the resonant current. This paper ext...

The source and drain electrode contact resistance of the hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) with a Schottky-barrier source/drain contact was measured using a gated-four-probe TFT structure. Typically its variation with the gate bias is considered to be independent of the gate bias but we observed that contact resistances decrease exponentially with increasing gat...

We propose that in nanotube field effect transistors (FETs) with small effective dielectric thickness the vertical potential drop across the nanotube diameter at finite gate bias can lower or eliminate the Schottky barrier at the electrode. This effect is demonstrated in single-walled carbon nanotube FETs fabricated on top of ultra-high-κ dielectric constant SrTiO3/Si substrates. These FETs sho...

In this paper a new design of a broadband microwave power limiter is presented and validated into simulation by using ADS software (Advanced Design System) from Agilent technologies. The final circuit is built on microstrip lines by using identical Zero Bias Schottky diodes. The power limiter is designed by Associating 3 stages Schottky diodes. The obtained simulation results permit to validate...