Exact bounds for the positions of the branch points for cyclic coverings of the p-adic projective line by Mumford curves are calculated in two ways. Firstly, by using Fumiharu Kato’s ∗-trees, and secondly by giving explicit matrix representations of the Schottky groups corresponding to the Mumford curves above the projective line through combinatorial group theory.

Strong electroluminescence (EL) of reverse-biased Er-doped β-Ga2O3 Schottky barrier diodes is demonstrated. The devices are prepared by pulsed laser deposition featuring co-doping n-type dopant Si and isovalent Er, while contacts formed Pt-sputtering. display a rectification ratio more than nine orders magnitude at ±3 V in the virgin state, but under reverse bias that yields leakage current den...

The present review summarizes a series of the most important historical contributions of German scientific researchers and industrial companies in Germany to the physics and applications of electromagnetic oscillations and waves during the past 140 years and intends to point out some relations to Russian scientists. The chronology highlights the following scientists: Philipp Reis (*1834-†1874):...

Abstruct-Monolithic diode grids have been fabricated on 2-cm square gallium-arsenide wafers in a proof-of-principle test of a quasi-optical varactor millimeter wave frequency multiplier array concept. An equivalent circuit model based on a transmission-line analysis of plane wave illumination was applied to predict the array performance. The doubler experiments were performed under far-field il...

A p-i-n junction diode based on the selectively doped single-walled carbon nanotube (SWCNT) had been investigated, in which two opposite ends of individual SWCNT channel were doped into the p- and n-type SWCNT respectively while the middle segment of SWCNT was kept as the intrinsic. The symmetric and asymmetric contacts were used to fabricate the p-i-n junction diodes respectively and studied t...

The article outlines an inclusive list of thin film Schottky diodes (TFSD) references. review audits the fabrication and characterization TF metal-semiconductor (MS) diode, a TFSD. work functions metal ( ϕ m ) semiconducting material s determines whether established MS contact is ohmic or rectifying. Current-voltage (I – V) capacitance-voltage (C characterizations are essential electrical trans...

Whereas SiC switches have the overall lowest dynamic losses, they show higher static losses due to the lack of conductivity modulation and the necessary chip size limitations due to the still high SiC base material price. The frequency dependence of the total losses of the various 1200V configurations (Si-IGBT + Si freewheeling diode, Si IGBT + SiC Schottky diode, SiC-JFET cascode plus internal...

Terahertz (THz) waves have attracted attention as carrier for next-generation wireless communications (6G). Electronic THz emitters are widely used in current mobile communications; however, they may face technical limitations 6G with upper-frequency limits. We demonstrate communication a 560-GHz band by using photonic emitter based on photomixing of 560-GHz-spacing soliton microcomb uni-travel...