Nanoscale entities are by definition invisible to the unmediated senses. Yet generating images of these objects has been crucial to the rhetoric of nanotech boosters. Thus, bringing microscopes and microscopists under the nano umbrella has been central to the work of nano proponents. No instruments have been more crucial to this process than the scanning tunneling microscope (STM) and atomic fo...

The ability to evaluate structural-functional relationships in real time has allowed scanning probe microscopy (SPM) to assume a prominent role in post genomic biological research. In this mini-review, we highlight the development of imaging and ancillary techniques that have allowed SPM to permeate many key areas of contemporary research. We begin by examining the invention of the scanning tun...

A multipurpose room temperature scanning Hall probe microscope (RT-SHPM) system incorporating an ultra-high sensitive sub-micron GaAs Hall probe (active area of 0.8 0.8mm; room temperature Hall coefficient of 0.3O/G) exhibiting extremely high magnetic field sensitivity (0.04G/ p Hz) was used for the direct, non-invasive and quantitative imaging of magnetic field fluctuations in very close proxi...

Stable, reversible conductance transitions and memory effects were observed in solid-state rotaxane-based Langmuir-Blodgett (LB) thin films. Taking advantage of the switching property, we have achieved reproducible nanometer-scale recording dots on rotaxane LB films via voltage application using a scanning tunneling microscope probe. The stable and easily controlled conductance switching makes ...

We have investigated the resolution of scanning transmission electron microscope images for single, isolated atoms. The images are simulated from first principles using a nonlocal model for electron core-loss spectroscopy. We have examined the role of the width of the probe in determining the localisation of the images.

scanning impedance microscopy (sim) is one of the novel scanning probe microscopy (spm) techniques, which has been developed to taking image from sample surface, providing quantitative information with high lateral resolution on the interface capacitance, and investigating the local capacitance–voltage (c–v) behavior of the interface and ac transport properties. the sim is an ordinary afm equip...