نتایج جستجو برای: saturation current

تعداد نتایج: 822328  

Journal: :J. Artif. Intell. Res. 2015
Andreas Steigmiller Birte Glimm

Nowadays, saturation-based reasoners for the OWL EL profile of the Web Ontology Language are able to handle large ontologies such as SNOMED very efficiently. However, it is currently unclear how saturation-based reasoning procedures can be extended to very expressive Description Logics such as SROIQ—the logical underpinning of the current and second iteration of the Web Ontology Language. Table...

2016
Josua Stuckelberger Gizem Nogay Philippe Wyss Quentin Jeangros Christophe Allebé Fabien Debrot Xavier Niquille Martin Ledinsky Antonin Fejfar Matthieu Despeisse Franz-Josef Haug Philipp Löper Christophe Ballif

We present a novel passivating contact structure based on a nanostructured silicon-based layer. Traditional poly-Si junctions feature excellent junction characteristics but their optical absorption induces current losses when applied to the solar cell front side. Targeting enhanced transparency, the poly-Si layer is replaced with a mixed-phase silicon oxide/silicon layer. This mixed-phase layer...

2008
V. Hariharan R. Thakker M. B. Patil J. Vasi Ramgopal Rao

A closed-form inversion charge-based long-channel drain current model is developed for a symmetrically driven, lightly doped Symmetric Double-Gate MOSFET (SDGFET). It is based on the drift-diffusion transport mechanism and considers velocity saturation using the Caughey-Thomas model with exponent n=2, vertical field mobility degradation and body doping. It is valid in subthreshold as well as ab...

Journal: :Physics of Plasmas 2023

In this work, we examine sheath formation in the presence of bias potentials current saturation regime for pulsed power fusion experiments. It is important to understand how particle and heat fluxes at wall may impact material affect electrode degradation. Simulations are performed using 1X-1V Boltzmann–Poisson system a proton–electron plasma ranging from 0 10 kV. The results indicate that near...

2011
Montree KUMNGERN Usa TORTEANCHAI Kobchai DEJHAN

This paper presents a new simple configuration to realize the voltage-controlled floating resistor, which is suitable for integrated circuit implementation. The proposed resistor is composed of three main components: MOS transistor operating in the non-saturation region, DDCC, and MOS voltage divider. The MOS transistor operating in the non-saturation region is used to configure a floating line...

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