نتایج جستجو برای: sapphire wafer
تعداد نتایج: 28205 فیلتر نتایج به سال:
We have studied the orientation of the train segments of a poly(methyl methacrylate) (PMMA) adsorbed layer at the CCl4-sapphire interface using surface-sensitive IR-visible sum frequency generation (SFG) spectroscopy. The SFG spectra of PMMA chains adsorbed on sapphire indicate ordered ester methyl groups. In comparison, we did not observe any significant contributions from the backbone methyle...
Background: Thermocycling simulates the temperature dynamics in the oral environment. This in vitro study done to measure and compare the effect of thermocycling on the shear bond strength of stainless steel and sapphire brackets bonded to human enamel teeth using light cured orthodontic adhesive and debonded at various time, and to measure adhesive remnant index after debonding. Materials and ...
Gallium nitride light emitting diodes were deposited on a sapphire substrate that was pre-patterned with an ordered two-dimensional structure. The size and arrangement of the substrate surface pattern was designed to increase the diffraction and extraction of light from the device as well as define the grain size and thus dislocation density of the GaN crystal. A close-packing of self-assembled...
2014 The existence of a direct drain to source leakage current is experimentally demonstrated on n-channel SOS MOS transistors. The measured currents are shown to vary according to a model of an inversion channel at the sapphire interface working in the weak inversion regime. A value of interface state density at the silicon sapphire interface of 1012 cm-2 eV-1 is determined by static I(V) meas...
We applied the laser interference lithography method to form a patterned sapphire substrate (PSS). A three-dimensional photonic crystal was formed by autocloning the PSS with alternate Ta2O5/SiO2 coatings. A high total integrated reflectance (TIR) band was obtained around the 410 to 470 nm wavelength range that matched the emission spectrum of the gallium nitride (GaN) light-emitting diode (LED...
We report observations of the gyrotropic change in magnetic susceptibility of the Fe electron paramagnetic resonance at 12.037GHz (between spin states |1/2 > and |3/2 >) in sapphire with respect to applied magnetic field. Measurements were made by observing the response of the high-Q Whispering Gallery doublet (WGH±17,0,0) in a Hemex sapphire resonator cooled to 5 K. The doublets initially exis...
SAPPHIRE plot for Beta3S (Figure 6 in the main text). We represented the peptide by the sine and cosine values of 99 nonsymmetric dihedral angles. We used a stochastic, approximate algorithm to generate the progress indices for the SAPPHIRE plots in Figure 6. The stochastic algorithm is scalable to large data sets because of the preorganization of the data via tree-based, hierarchical clusterin...
The observation of single mode propagation in an air-clad single crystal sapphire optical fiber at wavelengths at and above 783 nm is presented for the first time. A high-temperature wet acid etching method was used to reduce the diameter of a 10 cm length of commercially-sourced sapphire fiber from 125 micrometers to 6.5 micrometers, and far-field imaging provided modal information at interval...
Large-scale nanopatterned sapphire substrates were fabricated by annealing of patterned Al thin films. Patterned Al thin films were obtained by soft UV-nanoimprint lithography and reactive ion etching. The soft mold with 550-nm-wide lines separated by 250-nm space was composed of the toluene-diluted polydimethylsiloxane (PDMS) layer supported by the soft PDMS. Patterned Al thin films were subse...
We evaluated the new Beckman Coulter DxH 800 hematology analyzer (Beckman Coulter, Miami, FL) vs the Abbott Diagnostics Cell-Dyn Sapphire (Abbott Diagnostics, Santa Clara, CA) and Beckman Coulter LH 780 hematology analyzers using 430 adult specimens. The DxH 800 provided a CBC and differential that correlated well with those of the Sapphire and LH 780, with most parameters showing correlation c...
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