The Jizerka Quaternary alluvial placer in the Czech Republic has been a well-known source of gemstones since 16th century, and only one Europe that yielded significant amount jewel-quality sapphire. Besides Mg-rich ilmenite (“iserine”), which is most common heavy mineral at locality, some other minerals have mined for jewellery purposes. These are corundum (sapphire ruby varieties), zircon (“hy...

• In this work, the first integration of a continuous polycrystalline CdZnO thin layer on GaAs, one dominant mid-IR optoelectronic platforms, is reported. The preserved out-of-plane orientation crystal grain yields very minor degradation plasma damping compared to monocrystalline grown sapphire. CdZnO/GaAs system holds Surface Plasmon Polaritons with figure merit comparable best TCOs in mid-IR:...

A continuous-wave, argon-ion-pumped, titanium-doped sapphire laser has been constructed. Pulses of 80-psec duration obtained through active mode locking have been compressed to less than 800 fsec using nonlinear external cavity feedback.

The effect of different degrees the sapphire surface nitridation process completion on AlN buffer layer morphology has been studied. It was found that ~85% crystalline phase formation promotes growth a two dimensional with smooth morphology, regardless substrate temperature and ammonia flux. In contrast, during nucleation as result weak or excessive nitridation, polycrystalline three-dimensiona...

ZnO thin films have been grown by radio-frequency magnetron sputtering on c-plane sapphire substrates with III-V (i.e., GaAs and InAs) intermediate layers. The intermediate layers were grown by molecular beam epitaxy. Structural and optical properties were studied by X-ray diffraction (XRD) and Raman scatterings. The growth orientations of the ZnO/III-V/c-sapphire heterostructures were determin...

Resonant inelastic X-ray scattering (RIXS) experiments require special sets of near-backscattering spherical diced analyzers and high-resolution monochromators for every distinct absorption-edge energy and emission line. For the purpose of aiding the design and planning of efficient RIXS experiments, comprehensive lists of suitable analyzer reflections for silicon, germanium, α-quartz, sapphire...

Silicon-on-Sapphire (SOS) CMOS is an attractive technology for radiation-tolerant circuits design. It eliminates single-event latch-up and has a smaller sensitive volume for single-event upsets (SEUs) and single-event transients (SETs) compared to Bulk CMOS technology [1, 2]. However, like any Silicon-On-Insulator technology, SOS technology has back-channel leakage as part of the total ionizati...

Ever since Gallium Nitride based high electron mobility transistor (HEMT) operation was demonstrated (Khan, 1993), there is a tremendous interest in the design and growth of GaN based transistors for high power device applications. The nitride semiconductors have wide application in the fields of high electron mobility transistors (HEMTs), light emitting diodes, and various high power electroni...

Single-crystal (SC) fibers have the potential of delivering extremely high laser energies. Sapphire fibers have been the most commonly studied SC fiber and the losses for sapphire fibers have been as low as 0.4 dB/m for a 300micron core-only fiber at 3 microns. In this study we report on the growth of SC yttrium aluminum garnet, Y3Al5O12 (YAG) fibers from undoped SC source rods using the Laser ...

We report the growth of high-quality GaN layer on single-walled carbon nanotubes (SWCNTs) and graphene hybrid structure (CGH) as intermediate layer between GaN and sapphire substrate by metal-organic chemical vapor deposition (MOCVD) and fabrication of light emitting diodes (LEDs) using them. The SWCNTs on graphene act as nucleation seeds, resulting in the formation of kink bonds along SWCNTs w...