We investigate the dynamics of optoelectronic oscillator (OEO) systems based on resonant tunneling diode photodetector (RTD-PD) and laser diode hybrid integrated circuits. We demonstrate that RTD-based OEOs can be noise-activated in either monostable or bistable operating conditions, providing a rich variety of signal outputs—spiking, square pulses, bursting—and behaviours—stochastic and cohere...

In this paper, we present the analytical expression of phase-controlled class-D inverter at any duty ratio. By considering the body-diode of MOSFET effects and harmonic components of resonant current, analytical expression of phase-controlled class-D inverter at any phase shift and any duty ratio can be obtained. The validity of the analytical expression was confirmed by PSpice simulation.

A new frequency agile BST varactor loaded stacked circular microstrip antenna is presented. The antenna is analysed using extended cavity model. One of two bands of antenna is tunable with the help of BST varactor. The upper band is useful for WiMAX and lower band for other wireless communication systems. Various antenna parameters like return loss, resonant frequency, frequency agility etc. ha...

Abstract We present an approach for the highly sensitive photon detection based on the quantum dots (QDs) operating at temperature of 77K. The detection structure is based on an AlAs/GaAs/AlAs double barrier resonant tunneling diode combined with a layer of self-assembled InAs QDs (QDRTD). A photon rate of 115 photons per second had induced 10nA photocurrent in this structure, corresponding to ...

Abstract This paper reports an enhancement of the nonvolatile memory characteristics GaN/AlN resonant tunnelling diodes (RTDs) by reducing crystal defects in quantum well structure. Pit-shaped are strongly suppressed when pure N 2 , instead a /H mixture, is used as carrier gas and trimethylindium introduced surfactant for metalorganic vapor phase epitaxy In addition, density dislocations lowere...

Abstract ULTRARAM™ is a III–V semiconductor memory technology which allows non-volatile logic switching at ultra-low energy (per unit area). This achieved by exploiting triple-barrier resonant tunnelling (TBRT) through series of InAs/AlSb heterojunctions specifically engineered for this purpose. Electrons the barriers low bias are trapped in floating gate, presence or absence charge defines log...

The device efficiency of a silicon SDR (p + nn + ) IMPATT diode at Ka-band has been studied by using small signal simulation and field swing upto 50 % of the maximum dc electric field. It is found that the d.c. to r.f. conversion efficiency of the SDR IMPATT diode decreases with the increase in field swing upto 50 %, from 8.98% to 7.84%. An integrated heat sink cum resonant cap cavity has been ...