نتایج جستجو برای: resistor network model

تعداد نتایج: 2596093  

Journal: :Medical physics 2014
Fei Gao Qian Zheng Yuanjin Zheng

PURPOSE Numerical study of microwave imaging and microwave-induced thermoacoustic imaging utilizes finite difference time domain (FDTD) analysis for simulation of microwave and acoustic interaction with biological tissues, which is time consuming due to complex grid-segmentation and numerous calculations, not straightforward due to no analytical solution and physical explanation, and incompatib...

Journal: :Biophysica 2022

We propose a model for bacterial Quorum Sensing based on an auxiliary electrostatic-like interaction originating from fictitious electrical charge that represents bacteria activity. A cooperative mechanism charge/activity exchange is introduced to implement chemotaxis and replication. The system thus represented by means of complex resistor network where link resistances take into account the a...

2012
Carl E Mungan Trevor C Lipscombe

The ancient Babylonians had an iterative technique for numerically approximating the values of square roots. Their method can be physically implemented using series and parallel resistor networks. A recursive formula for the equivalent resistance Req is developed and converted into a nonrecursive solution for circuits using geometrically increasing numbers of identical resistors. As an example,...

Journal: :international journal of advanced biological and biomedical research 2014
rahim amoozadeh mohammad javad sheykh davoudi heidar ali ghasemnejad

predicting the maintenance and management costs and replacement age of tractors in agricultural mechanized units, is important from several points. so, doing a timely agricultural operations, more accurate measure of the amount of income  including the cost of these items , determining the useful life of old tractors , replacement age, cost of the process changes and the possibility of examinin...

2010
Y. Yu G. Song L. Sun

Three-dimensional Monte Carlo simulation is used to investigate the electrical conductivity of nanocomposites composing of conducting nanofillers and insulating polymer matrix. When nanofillers concentrations low and they are well dispersed in the insulating matrix, electron tunneling resistance between the nanofiller junctions is found to play the dominant role in electron transport. In additi...

Journal: :Indonesian Journal of Electrical Engineering and Computer Science 2021

This paper investigates the applied uncertainty and sensitivity analysis to resistors used in voltage series operational amplifier circuit. Two bands are considered which gold band (5% uncertainty) silver (10% uncertainty). To generate sample points, SIMLAB tool is used. A total of points based on Sobol’ technique has been created for each resistor band. The modelled MATLAB/Simulink. MATLAB scr...

2013
P. J. Jones J. A. M. Huhtamäki J. Salmilehto K. Y. Tan M. Möttönen

We introduce a setup which realises a tunable engineered environment for experiments in circuit quantum electrodynamics. We illustrate this concept with the specific example of a quantum bit, qubit, in a high-quality-factor cavity which is capacitively coupled to another cavity including a resistor. The temperature of the resistor, which acts as the dissipative environment, can be controlled in...

2003
Shinichi Hori Tadashi Maeda Hitoshi Yano Noriaki Matsuno Keiichi Numata Nobuhide Yoshida Yuji Takahashi Tomoyuki Yamase Robert Walkington Hikaru Hida

This paper describes a new widely tunable transconductor that can realize a channel-select filter having both of these characteristics. The transconductor includes a new negative source degeneration resistor. The paper also discusses the measured results obtained for the 6-order elliptic LPF adopting this new circuit. We propose a new negative source degeneration resistor (NSDR) transconductor ...

Journal: :IEICE Transactions 2009
Apisak Worapishet Phanumas Khumsat

The sub-threshold R-MOSFET resistor structure which enables tuning range extension below the threshold voltage in the MOSFET with moderate to weak inversion operation is analyzed in detail. The principal operation of the sub-threshold resistor is briefly described. The analysis of its characteristic based on approximations of a general MOS equation valid for all regions is given along with disc...

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