نتایج جستجو برای: rashba effect
تعداد نتایج: 1642853 فیلتر نتایج به سال:
We study the effects of a gate-controlled Rashba spin-orbit coupling to quantum spin Hall edge states in HgTe quantum wells. A uniform Rashba coupling can be employed in tuning the spin orientation of the edge states while preserving the time-reversal symmetry. We introduce a sample geometry where the Rashba coupling can be used in probing helicity by purely electrical means without requiring s...
We present a topological description of the quantum spin-Hall effect (QSHE) in a two-dimensional electron system on a honeycomb lattice with both intrinsic and Rashba spin-orbit couplings. We show that the topology of the band insulator can be characterized by a 2 x 2 matrix of first Chern integers. The nontrivial QSHE phase is identified by the nonzero diagonal matrix elements of the Chern num...
Spin and pseudospin in graphene are known to interact under enhanced spin-orbit interaction giving rise to an in-plane Rashba spin texture. Here we show that Au-intercalated graphene on Fe(110) displays a large (∼230 meV) bandgap with out-of-plane hedgehog-type spin reorientation around the gapped Dirac point. We identify two causes responsible. First, a giant Rashba effect (∼70 meV splitting) ...
Since the formulation of the geometric phase by Berry, its relevance has been demonstrated in a large variety of physical systems. However, a geometric phase of the most fundamental spin-1/2 system, the electron spin, has not been observed directly and controlled independently from dynamical phases. Here we report experimental evidence on the manipulation of an electron spin through a purely ge...
We report the pressure-induced topological quantum phase transition of BiTeI single crystals using Shubnikov-de Haas oscillations of bulk Fermi surfaces. The sizes of the inner and the outer FSs of the Rashba-split bands exhibit opposite pressure dependence up to P = 3.35 GPa, indicating pressure-tunable Rashba effect. Above a critical pressure P ~ 2 GPa, the Shubnikov-de Haas frequency for the...
We investigate the electronic properties of graphene in a magnetic and a strain-induced pseudo-magnetic field in the presence of strong spin-orbit interactions (SOI). For a homogeneous field we provide analytical results for the Landau level eigenstates for arbitrary intrinsic and Rashba SOI, including also the effect of a Zeeman field. We then study the edge states in a semi-infinite geometry ...
Numerical methods are developed in the quantum transport calculations for electron in the waveguides with spin–orbital (Rashba) interaction. The methods are based on a hybrid mode-matching scheme in which the wavefunctions are expressed as the superposition of eigenmodes in the lead regions and in the device region the wavefunction is expressed on the discrete basis. Two versions are presented ...
We study shot noise for spin-polarized currents and entangled electron pairs in a four-probe (beam-splitter) geometry with a local Rashba spin-orbit (s-o) interaction in the incoming leads. Within the scattering formalism we find that shot noise exhibits Rashba-induced oscillations with continuous bunching and antibunching. We show that entangled states and triplet states can be identified via ...
We propose a spin interferometer using Rashba spin–orbit interaction. A spin interference effect is demonstrated in small arrays of mesoscopic InGaAs rings. This spin interference is the time reversal Aharonov– Casher (AC) effect. The AC interference oscillations are controlled over several periods. This result shows evidence for electrical manipulation of the spin precession angle in an InGaAs...
The authors describe the molecular beam epitaxy of relaxed, nominally undoped In0.75Ga0.25As–In0.75Al0.25As quantum well structures grown on InP substrates. The maximum two-dimensional electron density is 2 1011 cm−2, with a peak mobility of 2.2 105 cm2 V−1 s−1 at 1.5 K. In high magnetic field, the electron g-factor was shown to have a magnitude of 9.1 0.1 at Landau-level filling factor of 4. T...
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