Nanometer-size Si quantum dots (Si-QDs) with and without Ge core were prepared on thermally-grown SiO2 in a self-assembling manner by controlling the early stages of low pressure chemical vapor deposition (LPCVD). The surface potential changes in individual dots caused by charging or discharging of one electron or a few as were measured by using a Kelvin probe technique in an atomic force micro...

In this paper, we report on the enhancement of spectral photoresponsivity of porous silicon metal-semiconductor metal (PS-MSM) photodetector embedded with colloidal quantum dots (QDs) inside the pore layer. The detection efficiency of QDs/PS hybrid-MSM photodetector was enhanced by five times larger than that of the undoped PS-MSM photodetector. The bandgap alignment between PS (approximately 1...

Förster resonance energy transfer FRET between CdTe quantum dots QDs at nanoscale proximity to gold nanoparticle Au NP layers is investigated experimentally. We have observed the enhancement in the acceptor QDs’ photoluminescence lifetime intensities. The decrease in donor QDs’ exciton lifetime from 5.74 to 2.06 ns, accompanied by an increase in acceptor QDs’ exciton lifetime from 3.38 to 7.52 ...

Abstract--We have theoretically investigated the effect of shape anisotropy and size on electronic structure of GaAs/AlGaAs quantum dots (QDs). The quantum dot is modeled by anisotropic parabolic confinement potential in the plane perpendicular to the growth direction while the confinement along the growth direction is modeled as quantum well potential. The Luttinger Hamiltonian formulation has...

Self-assembled, epitaxially grown InAs/GaAs quantum dots (QDs) are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth results in an essentially random in-plane spatial distribution of QDs, presenting a challenge in creating devices that exploit the strong interaction of sing...

Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin gate defined quantum dots (QDs) can be achieved on TMDCs. Herein, standard semiconductor fabrication techniques are used to demonstrate quantum confined structures on WSe2...

The feature size of conventional electronic devices has already fallen below the acoustic phonon mean free path (MFP) in silicon, which is estimated to be 50 nm – 300 nm at room temperature. The lateral dimensions of nanowires and the size of quantum dots in quantum dot superlattices (QDS) fabricated by different self-assembly techniques are approaching the wavelength of a dominant phonon mode,...

We present a simple method of synthesizing monodisperse and stable In(Zn)P quantum dots (QDs) by tuning the intermediate meta‐stable particles called magic‐sized clusters' (MSC) surface with ZnCl 2 . Destabilized MSCs easily dissociated into monomers for nucleation growth QDs.

The quantum confinement effect on the spectrum of near-field thermal radiation by periodic and random arrays dots (QDs) is investigated. local density states (LDOS) thermally emitted QD made three lead chalcogenides, namely, sulfide, selenide, telluride, computed at a distance from arrays. dielectric function QDs extracted their absorption spectra utilizing an optimization technique. discrete d...

Quantum dots (QDs) have been increasingly used in biolabeling recently as their advantages over molecular fluorophores have become clear. For bioapplications QDs must be water-soluble and buffer stable, making their synthesis challenging and time-consuming. A simple aqueous synthesis of silica-capped, highly fluorescent CdTe quantum dots has been developed. CdTe QDs are advantageous as the emis...