نتایج جستجو برای: qca1 gate
تعداد نتایج: 42907 فیلتر نتایج به سال:
For the 45nm technology node, high-k+metal gate transistors have been introduced for the first time in a high-volume manufacturing process [1]. The introduction of a high-k gate dielectric enabled a 0.7x reduction in Tox while reducing gate leakage 1000x for the PMOS and 25x for the NMOS transistors. Dual-band edge workfunction metal gates were introduced, eliminating polysilicon gate depletion...
The chloride channel from the Torpedo electric organ, ClC-0, is the best studied member of a large gene-family (Jentsch, T.J. 1996. Curr. Opin. Neurobiol. 6:303-310.). We investigate the temperature dependence of both the voltage- and chloride-dependent fast gate and of the slow gate of the "double-barreled" ClC-0 expressed in Xenopus oocytes. Kinetics of the fast gate exhibit only a moderate t...
Gate resizing for minimum circuit delay is a fundamental problem in the performance optimization of gate-level circuits. In this paper , we study the complexity of two diierent minimum-delay gate resizing problems for combinational circuits composed of single-output gates. The rst problem is that of gate resizing for minimum circuit delay under the load-dependent delay model. The second problem...
The time taken for a CMOS logic gate output to change after one or more inputs have changed is called the output delay of the gate. A conventional multi-input CMOS gate is designed to have the same input to output delay irrespective of which input caused the output to change. A gate which can offer different delays for different input-output paths through it, is known as a v ̄ ariable input dela...
Monte Carlo simulation is an essential tool in emission tomography that can assist in the design of new medical imaging devices, the optimization of acquisition protocols and the development or assessment of image reconstruction algorithms and correction techniques. GATE, the Geant4 Application for Tomographic Emission, encapsulates the Geant4 libraries to achieve a modular, versatile, scripted...
High permittivity (k) gate dielectric films are widely studied to substitute SiO2 as gate oxides to suppress the unacceptable gate leakage current when the traditional SiO2 gate oxide becomes ultrathin. For high-k gate oxides, several material properties are dominantly important. The first one, undoubtedly, is permittivity. It has been well studied by many groups in terms of how to obtain a hig...
This paper analyzes an actual business-academia collaborative project from the viewpoint of stage gate approach (we call this approach “stage gate analysis”). Stage gate analysis is a method of reviewing a finished project and summarizing it, whereas conventional stage gate management is used to control an on-going project. The case study analyzed is a project undertaken over a period of 6 year...
We have modeled the Zeno effect controlled-sign gate of Franson et al. Phys. Rev. A 70, 062302 2004 and shown that high two-photon to one-photon absorption ratios, , are needed for high fidelity free-standing operation. Hence we instead employ this gate for cluster state fusion, where the requirement for is less restrictive. With the help of partially offline one-photon and two-photon distillat...
The on/off current ratio in organic ferroelectric field-effect transistors (FeFETs) is largely determined by the position of the threshold voltage, the value of which can show large device-to-device variations. Here we show that by employing a dual-gate layout for the FeFET, we can gain full control over the on/off ratio. In the resulting dual-gate FeFET the ferroelectric gate provides the memo...
We demonstrate complete characterization of a two-qubit entangling process--a linear optics controlled-NOT gate operating with coincident detection--by quantum process tomography. We use a maximum-likelihood estimation to convert the experimental data into a physical process matrix. The process matrix allows an accurate prediction of the operation of the gate for arbitrary input states and a ca...
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