This paper presents an improved three-phase PFC power rectifier with a three-phase diode rectifier cascaded four-switch boost converter. Its operating principle contains the operating principle of two conventional three-phase PFC power rectifiers: one switch boost converter type and a two switch boost converter type. The operating characteristics of the four switch boost converter type three-ph...

This paper proposes a new reduced switch count seven-level triple boost inverter based on switched capacitor technique. The proposed topology has fewer number of components and the ability balancing voltage across capacitors. structure is very simple can be easily extended to higher levels. generalized for levels presented. level shifted pulse width modulation approach used evaluate topology. I...

The continuous growth of SWITCHMODETM Power Supplies (SMPS) worldwide makes this market one of the most important for manufacturers of power semiconductors. It is particularly important for manufacturers of devices in the 3 A to 10 A current range since most of these power supplies are designed to deliver power in the range of 50 to 1000 W. Although MOSFETs are often preferred for the new desig...

Growing power consumption threatens the explosive growth that the semiconductor industry has sustained over the last several decades. While the number of transistors continues to double every process technology generation, the slowing of constant field scaling has caused power density to increase limiting clock frequency. To combat these trends, designers must get more performance from each tra...

"Lockout" is an important method for hazardous energy control to protect humans working at a place where they may be injured by unexpected release of hazardous energy. Actually, this administrative control is used in order to compensate for the incompleteness of the ZMS (Zero Mechanical State). This paper proposes the basic requirements for the "Lockout" used for machine maintenance work by app...

Boost derived Active Power Factor Correction (APFC) imposes high stress on the main diode and main switch due to the high reverse voltage which may result in a very high reverse current. This study analyses the engineering requirements of the diode and transistor in APFC applications and compares a design that uses a fast silicon diode plus lossless snubber to a design with a Silicon Carbide (S...

We show that a Spin Field Effect Transistor, realized with a semiconductor quantum wire channel sandwiched between half-metallic ferromagnetic contacts, can have Fano resonances in the transmission spectrum. These resonances appear because the ferromagnets are halfmetallic, so that the Fermi level can be placed above the majority but below the minority spin band. In that case, the majority spin...

In this study, a new boost converter with an active snubber cell is proposed. The active snubber cell provides main switch to turn on with zero voltage transition (ZVT) and to turn off with zero current transition (ZCT). The proposed converter incorporating this snubber cell can operate with soft switching at high frequencies. Also, in this converter all semiconductor devices operate with soft ...