Polysilicon recombination junctions whose n-type bottom layers double as a passivating contact to the silicon surface are investigated. Such key element in interconnection of tandem devices with cell, and they could be used simplify processing sequence single-junction cells interdigitated back contacts (IBCs). tunneling require high temperatures crystallize layers; however, this also facilitate...

This paper presents an integration process of a novel tunable silver (Ag) deposit into MEMS surface micromachined bridge resonators. The mechanism of silver deposition is shown in Fig. 1. In this case, a blanket deposited Ag-doped chalcogenide glass film (Ge30 − Se70) serves as a solid electrolyte providing a medium for silver movement. Ag-ion migration in the electrolyte is induced by a DC vol...

A process is presented for the fabrication of high quality factor (Q), temperature-compensated silicon resonators without release-etch perforations within the epitaxial polysilicon encapsulation (epi-seal). Electrostatically actuated Lamé-mode square resonators up to 400 μm wide with frequencies from 8 to 107 MHz are released with no etch perforations, resulting in high f-Q products of up to 2e...

This paper discusses the removal of the doped polysilicon of a gate transistor by KOH wet chemical etching containing the spacer oxide and nitride that remain. This technique significantly improves the image quality of a two-dimensional (2-D) doping profile of scanning capacitance microscopy (SCM), which more accurately provides the results of the desired device structures for inline monitoring...

A model for MOS capacitors in accumulation is presented, which is able to predict the nonlinear distortion accurately. The key idea of this work is to include the polysilicon gate depletion effect in that model. Several test structures based on MOS capacitors in accumulation have been implemented with the object of validating the model and to explore the potential applications to high performan...