In this paper, quantum efficiency (QE) measurements performed on type-II InAs/GaSb superlattice (T2SL) photodiodes operating in the mid-wavelength infrared domain, are reported. Several comparisons were made in order to determine the SL structure showing optimum radiometric performances : same InAs-rich SL structure with different active zone thicknesses (from 0.5μm to 4μm) and different active...

1 Preface All products are continuously being improved for better performance. Spectrometers have developed in many ways since the introduction of simple and moderately priced Spectrophotometers which were commercially available from the mid 1950’s. 1 Such improvements have enabled SCINCO to manufacture PDA type UV-Vis. Spectrophotometers. The scope and performance of conventional single channe...

A new instrument was conceived and designed for quantitative measurement of chromophoric areas or colored spots such as are produced in (e.g.) thin-layer chromatography. The areas to be measured are subdivided grid-like into small subunits, and the absorbance of each of these is measured. The sum of absorbances for all subunits is directly proportional to the total amount of light-absorbing sub...

This paper presents the design, construction and testing of a new photodiode-based pyranometer for the visible spectral range (approx. 400 to 750 nm), whose principal characteristics are: accuracy, ease of connection, immunity to noise, remote programming and operation, interior temperature regulation, cosine error minimisation and all this at a very low cost, tens of times lower than that of c...

Igor Shcherback Alexander Belenky Orly Yadid-Pecht, MEMBER SPIE Ben Gurion University The VLSI Systems Center P.O.B. 653 Beer-Sheva 84105, Israel Abstract. We present an empirical dark current model for CMOS active pixel sensors (APSs). The model is based on experimental data taken of a 256 3 256 APS chip fabricated via HP in a standard 0.5-mm CMOS technology process. This quantitative model de...

Micro/nano scale thin-film shape memory alloys (SMAs) have been used in many different miniaturized systems. Using them as metal components fabrication of Schottky photodiodes has started a few years ago. In this work, new SMA-photodiode device with CuAlNi/n-Si/Al structure was produced by coating nano-thick CuAlNi SMA film onto n-Si wafer substrate via thermal evaporation. The photoelectrical ...

Integrated circuits and optoelectronics are currently dominated by silicon technology. However, silicon’s response wavelength is typically less than 1,100 nm, limiting the application of in machine vision, autonomous vehicles, night vision. For infrared photodetectors, HgTe colloidal quantum dots (CQDs) promising materials. Because adjustable bandgap, it responds over a wide spectral range. con...