The most research on the power consumption of circuits has been concentrated on the switching power and the power dissipated by the leakage current has been relatively minor area. In today‟s IC design, one of the key challenges is the increase in power dissipation of the circuit which in turn shortens the service time of battery-powered electronics, reduces the longterm reliability of circuits ...

Optical transistor is a device used to amplify and switch optical signals. Many researchers focus on replacing current computer components with optical equivalents, resulting in an optical digital computer system processing binary data. Electronic transistor is the fundamental building block of modern electronic devices. To replace electronic components with optical ones, an equivalent optical ...

The paper proposes the novel design of a 3T XOR gate combining complementary CMOS with pass transistor logic. The design has been compared with earlier proposed 4T and 6T XOR gates and a significant improvement in silicon area and power-delay product has been obtained. An eight transistor full adder has been designed using the proposed three-transistor XOR gate and its performance has been inve...

We propose to use the Hall response of topological defects, such as merons and antimerons, spin currents in two-dimensional magnetic insulator with in-plane anisotropy for identification Berezinskii-Kosterlitz-Thouless (BKT) transition a transistorlike geometry. Our numerical results relying on combination Monte Carlo dynamics simulations show from superfluidity conventional transport, accompan...

This chapter shows a minimum-width transistor placement method which is applicable to CMOS cells in presence of non-dual P and N type transistors, whereas the cell layout synthesis methods explained in the previous chapters are only for dual cells. This chapter only targets the minimum-width transistor placement, and does not take the intra-cell routings into consideration. The proposed method ...

There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET). The principles on which these devices operate (current controlled by an electric field) are very similar — the primary difference being in the methods by which the control element is ...

A novel method for the reduction of subthreshold slope below the room-temperature Boltzmann limit of 60 mV/dec for a field-effect transistor based on negative differential capacitance is proposed. This effect uses electric field induced electrostriction of a piezoelectric gate barrier of the transistor. The mechanism amplifies the internal surface potential over the applied gate voltage. This i...