Conduction band modification due to shear stress is investigated. Mobility in singleand double-gate SOI FETs is modeled for Silicon thin body orientation (001) and (110) under general stress conditions. Decrease of conductivity mass induced by uniaxial [110] tensile stress leads to mobility enhancement in the stress direction in ultra-thin body SOI MOSFETs.

a palladium composite membrane was prepared via electroless plating technique using organic-inorganic method during activation process. the ceramic support surface was modified by two tio2-boehmite and one γ-alumina layers to avoid pd penetration in support pores. thin and defect-free pd composite membrane was obtained by creating a relative smoothness on the ceramic support and using pd nanopa...

BACKGROUND Patients hospitalized for chronic obstructive pulmonary disease (COPD) exacerbations carry a high risk for early rehospitalization. We wished to identify the basic clinical factors associated with a high risk of rehospitalization, and to see how well the standardized All Patient Refined Diagnosis Related Group (APR-DRG) severity of illness (SOI) subclassification predicted rehospital...

Silicon-on-insulator (S01) technology exhibits three main advantages over bulk silicon technology for use in radiation environments. (1) SOI devices are immune to Iatchup, (2)the volume of the sensitive region (body) and hence total charge collection per transient irradiation is much reduced in SOI devices and (3) the insulating layer blocks charge collection from the substrate (i.e., no fimnel...

In this paper the error in estimating the conditional distribution of rainfall given a particular pre-existing or coexisting southern oscillation condition due to the limited length of the historical record is investigated and some statistical procedures for reducing this error are proposed and investigated. Introduction Rainfall in Australia appears to be influenced by the El-Nino/Southern Osc...

The simultaneous reduction of power supply and threshold voltages for low-power design without suffering performance losses will eventually reach the limit of diminishing returns as static leakage power dissipation becomes a significant portion of the total power consumption. This is especially acute in systems that are idling most of the time. In order to meet the opposing requirements of high...

For radiation hardened image sensors, a Silicon-On-Insulator (SOI) -Si/ 4H-SiC hybrid pixel device was developed. The consists of one Si photodiode and three nMOSFETs. At fabrication, SOI substrate directly bonded on via SiO2. After bonding, the base silicon Buried Oxide (BOX) were removed by TMAH wet-etching. By using this SOI-Si/ substrate, SOI-Si photodiodes nMOSFETs integrated in same subst...