نتایج جستجو برای: nanoscale transistor

تعداد نتایج: 41975  

Journal: :iranian journal of science and technology (sciences) 2015
qing-tian deng

functionally gradedpoisson’s ratio structures have been developed for critical protection. in thispaper, the static bending and buckling of fgpr nanoscale beam are studied basedon the nonlocal timoshenko beam model, in which both young’s modulus andpoisson’s ratio are assumed to vary continuously in the thickness direction. byutilizing total potential energy principle, equilibrium equations are...

Journal: :journal of ornamental plants 2015
h. mahmoodzadeh m. nabavi h. kashefi

an investigation was initiated to examine the effects of nanoscale titanium dioxide particles on plant growth and development. in view of the widespread cultivation of canola in iran and in other parts of the globe and in view of the potential influence of titanium on its growth, this plant was chosen as the model system. canola seeds were separately treated with different concentrations of nan...

Journal: :Integration 2012
Wasim Hussain Shah M. Jahinuzzaman

Complies with the regulations of this University and meets the accepted standards with respect to originality and quality. In order to meet the incessantly growing demand of performance, the amount of embedded or on-chip memory in microprocessors and systems-on-chip (SOC) is increasing. As much as 70% of the chip area is now dedicated to the embedded memory, which is primarily realized by the s...

2012
Veeresh DESHPANDE Arnaud BOURNEL Abdelkader SOUIFI Christophe DELERUE Marco FANCIULLI Noel MAGNEA Xavier JEHL Maud VINET Romain WACQUEZ

Continuous scaling of MOSFET dimensions has led us to the era of nanoelectronics. Multigate FET (MuGFET) architecture with ’nanowire channel’ is being considered as one feasible enabler of MOSFET scaling to end-ofroadmap. Alongside classical CMOS or Moore’s law scaling, many novel device proposals exploiting nanoscale phenomena have been made either. Single Electron Transistor (SET), with its u...

Journal: :IJMTIE 2011
Sagarika Pal Ramtanu Mukherjee Sharmi Ganguly

In this study, a semi cylindrical capacitive array type liquid interface level measuring sensor is described. The sensor consists of a continuous large semi cylindrical thin metallic plate acting as a common plate of the capacitor and an array of small semi cylindrical thin metallic plates, separated by very small gap distance. All plates are mounted along the outer wall of a cylindrical non co...

Journal: :journal of computer and robotics 0
mahmoud mohammad-taheri faculty of electrical, computer and it engineering, qazvin branch, islamic azad university, qazvin, iran

a complete procedure for the design of w-band low noise amplifier in mmic technology is presented. the design is based on a simultaneously power and noise matched technique. for implementing the method, scalable bilateral transistor model parameters should be first extracted. the model is also used for transmission line utilized in the amplifier circuit. in the presented method, input/output ma...

2014
Gargi khanna

In this paper review study on different types of Junctionless transistor is promoted. Here a comparative study of SOI, bulk planar, double gate and tunnel Junctionless field effect transistor. It is observed Junctionless transistor exhibits better short channel effects and ON current then inversion mode device. Tunnel Junctionless transistor exhibits the properties of both tunnel FET and Juncti...

2015
Akira Fujiwara Hiroshi Inokawa Kenji Yamazaki

Single-electron transistors SETs are often discussed as elements. A single-electron transistor consists of a small conducting island coupled to source and.Single-electron transistor SET is a key element in our research field where. Figure 2: Transfer of electrons is a one-by-one in Single Electron Transistor.Nanoelectronics Single-electron transistor Coulomb blockade, Coulomb. Single Electron T...

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