نتایج جستجو برای: nano mosfet
تعداد نتایج: 53500 فیلتر نتایج به سال:
background: the purpose of this study was to investigate the various gantry angle and ssd dependencies of tld and mosfet dosimeters. materials and methods: lif (mg) tld and mosfet were used in this study. dosimeter systems were calibrated and then irradiated at various gantry angle and ssd by applying 6 mv photon energy. results: based on the results, mosfet changes were found to be in 2% range...
As scaling down MOSFET devices degrade device performance in term of leakage current and short channel effects. To overcome the problem a newer device Silicon-on-Insulator (SOI) MOSFET has been introduced. The Fully Depleted (FD) SOI MOSFETs also suffer from short channel effects (SCE) in the sub 65 nm regime due to reduction in threshold voltage. Several investigations are going to reduce the ...
The short circuit withstand energy (SCWE) variations, and time (SCWT) of planar trench silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power devices are studied after exposure to a total ionizing dose (TID). results for ON bias explored. SCWE SCWT SiC MOSFET tested TID with gamma irradiation. A higher degradation phenomenon the observed MOSFET. physical mechanis...
Silicon german ium (SiGe) has attracted significant attention for applications in the source/drain (S/D) regions of p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs). However, SiGe, as Ge concentration increases, high-density defects are generated, which limit its applications. Therefore, several techniques have been developed to minimize defects; however, these require rela...
-The first part of this article presents the modeling of the long-channel bulk MOSFET as a particular case of the SOI MOSFET. The second part reviews compares and scrutinizes various methods to extract the threshold voltage, the effective channel and the individual values of drain and source resistances. These are important device parameters for modeling and circuit simulation.
In this paper, a BSIMSOI RF gate resistance model for FDSOI MOSFET is introduced and verified. With the addition of the gate resistance model, the RF characteristic of FDSOI MOSFET could be modeled well. Self-heating effect (SHE) will affect RF data fitting significantly. A simple method to extract thermal resistance is proposed.
Background: The purpose of this study was to investigate the various gantry angle and SSD dependencies of TLD and MOSFET dosimeters. Materials and Methods: LiF (Mg) TLD and MOSFET were used in this study. Dosimeter systems were calibrated and then irradiated at various gantry angle and SSD by applying 6 MV photon energy. Results: Based on the results, MOSFET changes were found to be in 2% range...
Image segmentation is a fundamental image processing technique to extract the required information from an image. The core element of any integrated circuit (IC) chip for signal metal oxide semiconductor field effect transistor (MOSFET). There are various limitations MOSFET in sub-nm process technology. This work introduces application new type MOSFET, which known as spatial wave function switc...
This paper addresses the device physics of a novel vertical power MOSFET through detailed TCAD simulation. The simulated I-V and C-V characteristics match well with the measured data. The bias dependence of electrical potential near the recess trench is identified as the cause of a sharp drop in output capacitance against drain voltage. Index Terms — power MOSFET, output capacitance, TCAD
A novel extraction method of high frequency small-signal model parameters for MOSFET is proposed. From S-parameter measurement, this technique accurately extracts the MOSFET model parameters including the charge conservation capacitance parameters. To consider charge conservation, nonreciprocal capacitance is considered. The modeled S-parameters fit the measured ones well without any optimizati...
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