In this project, versatile processing techniques are established for improving the internal and external quantum efficiencies of Si MOSLEDs via the detuning the size and density of high-aspect-ration Si nano-rod and buried Si nanospheres. A rapid thermal annealing synthesis of metallic nanodot array is realized to control the size and density control of metallic nanodots as an etching mask for ...

Metal Oxide Semiconductor (MOS) capacitors (MOSCAP) have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal gate processing and its integration into CMOS technology remain an active research area projecting the solution to address the requirements of technology roadmaps. Screening, selection and depositi...

Foreword Physics and physicists play a vital role in underpinning our way of life, improving its quality and contributing in a major way to wealth creation. Innovations as powerful and diverse as the World Wide Web and magnetic resonance imaging (MRI) have emerged from studies in basic physics, becoming everyday technologies in just two decades. It is, therefore, a worthwhile challenge to specu...

Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morphology, fascinating properties and application potentials as an excellent dielectric layer for 2D-based nano-electronics. However, the unidirectional of h-BN thin films directly on insulating substrates remains signif...

If graphene had a band gap, it would probably be the optimum 2D system for electronics applications. Layered transition metal dichalcogenides (TMDs) with a robust intrinsic band gap appear as the next-best alternative. Only after a long search, however, optimum strategies have been devised to make low-resistance, ohmic contacts to TMDs [1]. In the meantime, a new class of 2D semiconductors has ...

In recent years, graphene has received so much attention because of its superlative properties and potential to revolutionize electronics, especially in VLSI. This study analyzes the effect single-event upset (SEU) an SRAM cell, which employs a metal-oxide semiconductor type nano-ribbon field transistor (MOS-GNRFET) compares results with another cell designed using PTM 10 nm FinFET node. Our si...

Theoretical analysis and Computer simulations have proven to be cost-effective and powerful tools in scientific studies of materials, particularly at nano-scale where synthesis of nano-structures, interpretation of their observed character and exploration of new structures are not always straight forward. We present here fundamental principles of techniques used today for computational simulati...

Following our recent theoretical development of the concept of nano-inductors, nano-capacitors and nanoresistors at optical frequencies and the possibility of synthesizing more complex nanoscale circuits, here we theoretically investigate in detail the problem of optical nano-transmission lines (NTL) that can be envisioned by properly joining together arrays of these basic nano-scale circuit el...

Abstract Micro‐nano‐fabrication on objects with complex surfaces is essential for the development of technologies in growing fields flexible electronics and photonics. Various strategies are devised to extend fabrication from conventional planar substrates curved ones, however, significant challenges still exist, especially framework 3D printing additive manufacturing. In this study, a novel te...