Massless Dirac electron systems such as graphene exhibit a distinct half-integer quantum Hall effect, and in the bipolar transport regime co-propagating edge states along the p-n junction are realized. Additionally, these edge states are uniformly mixed at the junction, which makes it a unique structure to partition electrons in these edge states. Although many experimental works have addressed...

A description of the fabrication technology high-quality tunnel SIS junctions is presented, with following characteristics: energy gap in superconductors V g =3.2-3.4 mV, current density up to J 35 kA/cm 2 , quality factor R j /R n (ratio subgap resistance normal-state resistance) 30, junction area 1 μm . The are integrated into NbTiN|SiO |Al microstrip line. Keywords: superconducting devices, ...

In this paper we report about the transport properties of mesoscopic normal-metal/superconductor (NS) hybrid systems with two different junction layouts. One is a junction fabricated by overlaying S on N wire and the other with S sandwiched between two N wires, forming an NSN structure. At zero bias all the junctions exhibited a sharp decrease of dV =dI; which is believed to arise from the inte...

The excellent thermal, electronic and optical properties of carbon nanotubes (NTs) and graphene strongly motivate the use of these materials in optoelectronic devices. Here, we review our recent investigations of NT and graphene optoelectronic devices. By studying individual NT and graphene devices, we aim to uncover novel physical phenomena and establish a foundation for future applications in...

We investigate the photocurrent generation mechanisms at a vertical p-n heterojunction between black phosphorus (BP) and molybdenum disulfide (MoS2) flakes through polarization-, wavelength-, and gate-dependent scanning photocurrent measurements. When incident photon energy is above the direct band gap of MoS2, the photocurrent response demonstrates a competitive effect between MoS2 and BP in t...

The dynamics of charge transfer at interfaces are fundamental to the understanding of many processes, including light conversion to chemical energy. Here, we report imaging of charge carrier excitation, transport, and recombination in a silicon p-n junction, where the interface is well defined on the nanoscale. The recorded images elucidate the spatiotemporal behavior of carrier density after o...

CdSe nanostructures were synthesized by using green chemical route as starch was used as capping agent. XRD, HR-TEM, SEAD, UV and PL studies were made for structural and optical properties of the prepared sample. Film morphology and the thickness measurement of n-CdSe were carried out with AFM analysis. I-V characteristics curve of this junction confirmed the formation of Schottky contact betwe...

A new approach for an electrically driven microlaser based on a microdisk transferred onto Silicon is proposed. The structure is based on a quaternary InGaAsP p-i-n junction including three InAsP quantum wells, on a thin membrane transferred onto silicon by molecular bonding. A p++/n++ tunnel junction is used as the p-type contact. The technological procedure is described and first experimental...

In this study we investigate the effect of atoms such as B, N, Ge and Sn on the optical and the electrical properties of capped (5, 0) zigzag carbon nanotube, using DFT calculation method. These elements were attached to the one end of the carbon nanotube. We considered four different structure designs as possible candidates for a p-n junction device. The electrical properties of these structur...

In this paper investigate the effect of X-ray irradiated on p-n diode. The change of electrical characteristics of diode can confirm by junction depth. Energy of irradiated are various in the range 40-70 keV at time of exposure 205 second. After irradiated by X-ray the electrical were changed, leakage current were decreased. The change of leakage current can analysis by junction depth, junction...