The growth of self-catalyzed GaAs nanowires (NWs) and monolithic light-emitting diode (LED) directly on flexible plastic substrates is reported. Dense NW forest attained in mode using metalorganic vapor phase epitaxy. NWs are shown to be crystalline with a zinc-blende phase. optical properties the found promising both photoluminescence emission light-trapping based reflectance transmittance mea...

This article focuses on the material properties of two III-V semiconductors, AlGaAs and GaInAsP, their usage as middle cell absorber materials in a wafer-bonded III-V//Si triple-junction solar cell. To this end single-junction cells were grown epitaxially lattice matched GaAs wafers using metalorganic vapor phase epitaxy. By optimizing growth temperature V/III ratio we could increase open-circu...