The possibility of fabrication 4.6 μm spectral range quantum-cascade laser heterostructures by molecular-beam epitaxy technique with non-selective overgrowth the metalorganic vapour-phase is shown. active region was formed on basis a heteropair In 0.67 Ga 0.33 As/In 0.36 Al 0.64 As solid alloys. waveguide claddings are indium phosphide. results surface defects inspection and X-ray diffraction a...

Ice lithography (IL) fabricates 2D and 3D patterns using electron-solid interaction principle. Herein, we report IL patterning of the negative tone metalorganic precursor. The precursor is condensed at 80 K. It then patterned a 5–20 keV electron beam. pattern thickness surface roughness increase with area dose. line linewidth also growing doses. XPS results show that tungsten bound to oxygen; m...

We present our results of (202̄1) GaN growth on (224̄3) patterned sapphire substrates. The substrates are patterned by etching trenches with c-plane-like side-facets. On these facets, the metalorganic vapor phase epitaxy (MOVPE) GaN growth starts in c-direction and forms triangularly shaped stripes eventually coalescing to a (202̄1) oriented layer. Xray rocking curves measured parallel to the stri...

This paper describes using wide energy gap lattice-matched II-VI layers, such as ZnSeTeZnMgSeTe, serving as a high-k gate dielectric for n-channel enhancement mode InGaAs field effect transistors (FETs). The thrust is to reduce interface states at the channel-gate insulator boundary while providing sufficient barrier height to confine the carriers in the channel created by inversion. In additio...