A novel nonlinear model for MESFET/HEMT devices is presented. The model can be applied to low power (GaAs) and high power (GaN) devices with equal success. The model provides accurate simulation of the static (DC) and dynamic (Pulsed) I-V characteristics of the device over a wide bias and ambient temperature range (from −70◦C to +70◦C) without the need of an additional electro-thermal sub-circu...

Ahsrrucf -In this paper, closed-form expressions are developed for the small-signal parameters of broad-band GaAs control MESFET's. The theoretical conducting-state resistance and nonconducting-state capacitance are compared with experimental data and demonstrate the usefulness of the models. Additionally, we considered the power handling capability of these devices and describe the various lim...

Organic metal-semiconductor field-effect transistors (OMESFETs) were fabricated with a polycrystalline organic semiconductor (pentacene) and characterized in order to systematically analyze their operation mechanism. Impedance measurements confirmed full depletion of the thick pentacene film (1 m) due to the low doping concentration of unintentional doping (typically less than 10 cm). The nece...

Recovered Energy Logic (REL) is a new family of logic that charges and discharges capacitive logic nodes in an ideally lossless fashion. To accomplish this, REL uses an AC waveform as both the system power supply and a two-phase clock. Unlike mainstream logic circuits, REL circuits require substantial current from all three terminals of a transistor. This makes BJTs and MESFETs a natural choice...

Amplifier Using Volterra Series Analysis,” IEEE Trans. Microwwe Theory Tech., vol. MTT-33, pp. 1395-1403, Dec. 1985. R. Gilmore, “Nonlinear Circuit Design Using the Modified Harmonic Balance Algorithm,” IEEE Trans. Microwave Theon Tech., vol. MTT34, pp. 1294-1307, Dec. 1986. A. M. Crosmun and S. A. Maas, “Minimization of Intermodulation Distortion in GaAs MESFET Small-Signal Amplifiers,” IEEE T...

Our device simulator MINIMOS has been used for the numerical analysis -of three-dimensional non-planar silicon MOSFET and GaAs MESFET structures. Here we present an extension of the program for the simulation of transient effects. This version of MINIMOS has further been enhanced by a new, highly accurate current integration method. The computational complexity of three-dimensional transient si...

There is an increasing demand for compact watt-level COherent sources in the millimeterand submillimeter-wave region. The approach that we have taken to satisfy this need is to fabricate twodimensional grids loaded with oscillators and multipliers for quasi-optical coherent spatial combining of the outputs of large numbers of lowpower devices. This was first demonstrated through the successful ...

I present the results of the feasibility study of ultra-fast low-power superconductor digital switches based on Rapid Single-Flux-Quantum (RSFQ) technology. I have considered RSFQ-based crossbar, Batcher-banyan, and shared bus switching fabrics , and the complexity and performance parameters of these circuits have been estimated. The results show that the proposed RSFQ digital switches with ove...