This paper presents a π-structure for RF MEMS switch based on numerical experimentation using 3D EM simulator. It has very low insertion and return losses in the ON-state and very high isolation in the OFF-state, over a wide bandwidth. It exhibits a minimum isolation of 50 dB, in the frequency range from dc to 50 GHz, and of 30 dB in the frequency range from 50 to 60 GHz. The insertion loss ran...