This paper proposes and demonstrates the extraction of MOSFET threshold voltage, source-drain resistance, gate field mobility reduction factor, and transistor gain factor from the measurement of the small-signal source-drain conductance of a transistor as a function of dc gate bias with zero dc drain bias. The theory is based on the analytical model that includes the effects of source-drain res...

Continuous-wave green laser-crystallized (CLC) single-grain-like polycrystalline silicon n-channel thinfilm transistors (poly-Si n-TFTs) demonstrate the higher electron mobility and turn-on current than excimer laser annealing (ELA) poly-Si n-TFTs. Furthermore, high drain voltage accelerates the flowing electrons in n-type channel, and hence the hot-carriers possibly cause a serious damage near...

We investigate the effect of electrostatic screening on a nanoscale silicon MOSFET electrometer. We find that screening by the lightly doped p-type substrate, on which the MOSFET is fabricated, significantly affects the sensitivity of the device. We are able to tune the rate and magnitude of the screening effect by varying the temperature and the voltages applied to the device, respectively. We...

We have performed terahertz time-domain magnetospectroscopy by combining a rapid scanning terahertz time-domain spectrometer based on the electronically controlled optical sampling method with a table-top minicoil pulsed magnet capable of producing magnetic fields up to 30 T. We demonstrate the capability of this system by measuring coherent cyclotron resonance oscillations in a high-mobility t...

The authors have used scanning gate microscopy combined with numerical simulations to analyze local carrier and current modulation effects in InAs semiconductor nanowires grown by metal-organic chemical vapor deposition. Measurements of current flow in the nanowire as a function of probe tip position, at both high and low drain bias, reveal that carrier and current modulation is strongest when ...

We investigated the source-to-drain capacitance (Csd) due to DIBL effect of silicon nanowire (SNW) MOSFETs. Short-channel SNW devices operating at high drain voltages have the positive value of Csd by DIBL effect. On the other hand, junctionless SNW MOSFETs without source/drain (S/D) PN junctions have negative or zero values by small DIBL effect. By considering the additional source-todrain cap...

X-ray-absorption near-edge structure ~XANES! measurements have been performed for a variety of boron-doped and undoped diamond films at the C K edge using the sample drain current mode. The C K-edge XANES spectra of B-doped diamonds resemble that of the undoped diamond regardless of the B concentration, which suggests that the overall bonding configuration of the C atom is unaltered. B impuriti...