نتایج جستجو برای: layered t gate
تعداد نتایج: 776318 فیلتر نتایج به سال:
A(1-x)Fe(2-y)Se2 (A = K, Cs, Rb, Tl) are recently discovered iron-based superconductors with critical temperatures (Tc) ranging up to 32 K. Their parent phases have unique properties compared with other iron-based superconductors; e.g., their crystal structures include ordered Fe vacancies, their normal states are antiferromagnetic (AFM) insulating phases, and they have extremely high Néel tran...
There is broad interest in surface functionalization of 2D materials and its related applications. In this work, we present a novel graphene layer transistor fabricated by introducing fluorinated graphene (fluorographene), one of the thinnest 2D insulator, as the gate dielectric material. For the first time, the dielectric properties of fluorographene, including its dielectric constant, frequen...
In this paper, we explore the computational potential and limitations of the multi-layered con-nectionist models [Minsky and Papert, 1968]. We found that the number of layers and the width are two crucial parameters for the multi-layered connectionist models. If each layer has the same size n and we increment the number of layers by 1, then the number of problems solved will increase 0{n 3) tim...
We describe the design and partial implementation of a real time architecture for a mobile robot, aimed particularly towards a vehicle developed for factory automation.. We develop a layered design to equip the robot with a number of behavioural competences. We examine sensing and a potential field algorithm especially to achieve modification of behaviour a t a speed close to the robot’s operat...
The atomistic quantum-dot cellular automata (QCA) based implementations of the reversible circuits have got tremendous exposures in the last few days, due to “room-temperature workability” of the QCA. The researchers are in serious need of a methodology that can realize the area-efficient QCA counterparts of reversible benchmark circuits. In this work, a novel methodology named majoritylayered ...
The steadily growing performance of processors for embedded systems make the usage of the platform independent Java system more and more attractive. However, the usual techniques known for acceleration of the Java Virtual Machine, widely used on desktop computers, don’t apply well in general to this class of devices, the most prominent example is the Just-in-Time-Compilation (JIT). This is caus...
Two-dimensional layered semiconductors such as molybdenum disulfide (MoS2) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mec...
The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of traditional epitaxial growth. For example, layered two-dimensional (2D) semiconductors have been incorporated into heterostructure devices with gate-tunable electronic and optical functionalities. However, 2D materials pr...
Orthorhombic black phosphorus (BP) and other layered materials, such as gallium telluride (GaTe) and tin selenide (SnSe), stand out among two-dimensional (2D) materials owing to their anisotropic in-plane structure. This anisotropy adds a new dimension to the properties of 2D materials and stimulates the development of angle-resolved photonics and electronics. However, understanding the effect ...
We report high performance p-type field-effect transistors based on single layered (thickness, ∼0.7 nm) WSe(2) as the active channel with chemically doped source/drain contacts and high-κ gate dielectrics. The top-gated monolayer transistors exhibit a high effective hole mobility of ∼250 cm(2)/(V s), perfect subthreshold swing of ∼60 mV/dec, and I(ON)/I(OFF) of >10(6) at room temperature. Speci...
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