نتایج جستجو برای: layered t gate

تعداد نتایج: 776318  

Journal: :Proceedings of the National Academy of Sciences of the United States of America 2014
Takayoshi Katase Hidenori Hiramatsu Toshio Kamiya Hideo Hosono

A(1-x)Fe(2-y)Se2 (A = K, Cs, Rb, Tl) are recently discovered iron-based superconductors with critical temperatures (Tc) ranging up to 32 K. Their parent phases have unique properties compared with other iron-based superconductors; e.g., their crystal structures include ordered Fe vacancies, their normal states are antiferromagnetic (AFM) insulating phases, and they have extremely high Néel tran...

2014
Kuan-I Ho Chi-Hsien Huang Jia-Hong Liao Wenjing Zhang Lain-Jong Li Chao-Sung Lai Ching-Yuan Su

There is broad interest in surface functionalization of 2D materials and its related applications. In this work, we present a novel graphene layer transistor fabricated by introducing fluorinated graphene (fluorographene), one of the thinnest 2D insulator, as the gate dielectric material. For the first time, the dielectric properties of fluorographene, including its dielectric constant, frequen...

1989
Chung-Jen Ho

In this paper, we explore the computational potential and limitations of the multi-layered con-nectionist models [Minsky and Papert, 1968]. We found that the number of layers and the width are two crucial parameters for the multi-layered connectionist models. If each layer has the same size n and we increment the number of layers by 1, then the number of problems solved will increase 0{n 3) tim...

2004
M. D. Adam Huosheng Hu

We describe the design and partial implementation of a real time architecture for a mobile robot, aimed particularly towards a vehicle developed for factory automation.. We develop a layered design to equip the robot with a number of behavioural competences. We examine sensing and a potential field algorithm especially to achieve modification of behaviour a t a speed close to the robot’s operat...

2017
Chiradeep Mukherjee Saradindu Panda Asish Kumar Mukhopadhyay Bansibadan Maji

The atomistic quantum-dot cellular automata (QCA) based implementations of the reversible circuits have got tremendous exposures in the last few days, due to “room-temperature workability” of the QCA. The researchers are in serious need of a methodology that can realize the area-efficient QCA counterparts of reversible benchmark circuits. In this work, a novel methodology named majoritylayered ...

2003
Georg Acher

The steadily growing performance of processors for embedded systems make the usage of the platform independent Java system more and more attractive. However, the usual techniques known for acceleration of the Java Virtual Machine, widely used on desktop computers, don’t apply well in general to this class of devices, the most prominent example is the Just-in-Time-Compilation (JIT). This is caus...

2017
Pengkun Xia Xuewei Feng Rui Jie Ng Shijie Wang Dongzhi Chi Cequn Li Zhubing He Xinke Liu Kah-Wee Ang

Two-dimensional layered semiconductors such as molybdenum disulfide (MoS2) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mec...

Journal: :Nano letters 2015
Deep Jariwala Vinod K Sangwan Jung-Woo Ted Seo Weichao Xu Jeremy Smith Chris H Kim Lincoln J Lauhon Tobin J Marks Mark C Hersam

The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of traditional epitaxial growth. For example, layered two-dimensional (2D) semiconductors have been incorporated into heterostructure devices with gate-tunable electronic and optical functionalities. However, 2D materials pr...

Journal: :Nano letters 2016
Xi Ling Shengxi Huang Eddwi H Hasdeo Liangbo Liang William M Parkin Yuki Tatsumi Ahmad R T Nugraha Alexander A Puretzky Paul Masih Das Bobby G Sumpter David B Geohegan Jing Kong Riichiro Saito Marija Drndic Vincent Meunier Mildred S Dresselhaus

Orthorhombic black phosphorus (BP) and other layered materials, such as gallium telluride (GaTe) and tin selenide (SnSe), stand out among two-dimensional (2D) materials owing to their anisotropic in-plane structure. This anisotropy adds a new dimension to the properties of 2D materials and stimulates the development of angle-resolved photonics and electronics. However, understanding the effect ...

Journal: :Nano letters 2012
Hui Fang Steven Chuang Ting Chia Chang Kuniharu Takei Toshitake Takahashi Ali Javey

We report high performance p-type field-effect transistors based on single layered (thickness, ∼0.7 nm) WSe(2) as the active channel with chemically doped source/drain contacts and high-κ gate dielectrics. The top-gated monolayer transistors exhibit a high effective hole mobility of ∼250 cm(2)/(V s), perfect subthreshold swing of ∼60 mV/dec, and I(ON)/I(OFF) of >10(6) at room temperature. Speci...

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