In this present research work, we presented a new Bottom Gate P-Type Organic Field Effect Transistor (OFET) humidity sensor and its applicability towards has been experimentally demonstrated. P-type organic semiconductor polyaniline (PANI) used in variety of applications, including logic circuit components, electromagnetic shielding, chemical sensing, anticorrosion. Humidity can be to monitor r...

In this article a low power and low latency 4-2 compressor has been presented. By using modified truth table and Pass Transistor Logic (PTL) a novel structure has been proposed which outperforms previous designs from the frequency of operation view point. The proposed design method has reduced the total transistor count considerably which will lead to reduced power consumption and smaller activ...

By electrochemically p-doping pentacene in the vicinity of the source-drain electrodes in organic field effect transistors the injection barrier for holes is decreased. The focus of this work is put on the influence of the p-doping process on the transistor performance. Cyclic voltammetry performed on a pentacene based transistor exhibits a reversible p-doping response. This doped state is evok...

There is a tunable band gap in ABC-stacked few-layer graphene (FLG) via applying a vertical electric field, but the operation of FLG-based field effect transistor (FET) requires two gates to create a band gap and tune channel’s conductance individually. Using first principle calculations, we propose an alternative scheme to open a band gap in ABC-stacked FLG namely via single-side adsorption. T...

The spin field-effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field-effect transistor for information processing has yet to be achieved, owing to several fundamental challenges such as the low spin-injection efficiency due to...

Related Articles Exact control of junction position using epitaxial NiSi2 crystallization in ultrathin silicon-on-insulator metal-oxidesemiconductor field-effect transistors AIP Advances 2, 032126 (2012) Triisopropylsilylethynyl-functionalized anthradithiophene derivatives for solution processable organic field effect transistors Appl. Phys. Lett. 101, 043301 (2012) Electric field-induced scatt...

This paper presents a field effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. We have demonstrated that the two-dimensional electron gas channel is modulated by the gate voltage. The dependence of the drain current on the drain voltage has no saturation region, similar t...

Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to conventional CMOS FETs. Previous theoretical and experimental works [1][2] on JNFETs have considered polysilicon gates and silicon-dioxide dielectric. However...

Collective interactions in functional materials can enable novel macroscopic properties like insulator-to-metal transitions. While implementing such materials into field-effect-transistor technology can potentially augment current state-of-the-art devices by providing unique routes to overcome their conventional limits, attempts to harness the insulator-to-metal transition for high-performance ...