In this paper we present a finite element discretization of the Joule-heating problem. We prove existence of solution to the discrete formulation and strong convergence of the finite element solution to the weak solution, up to a sub-sequence. We also present numerical examples in three spatial dimensions. The first example demonstrates the convergence of the method in the second example we con...

We study a model for the semiconductor problem that consists of a system of dynamic thermoelasticity equations of displacement and semiconductor equations. This problem arises from the observation that semiconductor devices are too often cracked and broken because of the thermal stresses. Since the heat source generated by Joule heating is quadratic in the gradient of the electrical potential, ...

We report the observation of a current-driven metal (M)-insulator (I) phase oscillation in two-terminal devices incorporating individual WxV1-xO2 nanobeams connected to parallel shunt capacitors. The frequency of the phase oscillation reaches above 5 MHz for approximately 1 mum long devices. The M-I phase oscillation, which coincides with the charging/discharging of the capacitor, occurs throug...

Abal~ct We have studied electron heating in a 2DEG in GaAs/AIGaAs heterojunctions below 0.5 IC The electron temperature was raised above the lattice temperature using Joule heat/n& Weak localiT~tion and the temperature-dependent sample resistance were used as thermometers for the electrons. The electron-phonon energy relaxation rate was found to be proportional to T s. We find that the relaxati...

An individual suspended graphene sheet was connected to a scanning tunneling microscopy probe inside a transmission electron microscope, and Joule heated to high temperatures. At high temperatures and under electron beam irradiation, the few-layer graphene sheets were removed layer-by-layer in the viewing area until a monolayer graphene was formed. The layer-by-layer peeling was initiated at va...

The RESET process of NbAlO-based resistive switching memory devices fabricated by atomic layer deposition is investigated at low temperatures from 80 to 200 K. We observed that the conduction mechanism of high resistance state changed from hopping conduction to Frenkel-Poole conduction with elevated temperature. It is found that the conductive filament rupture in RRAM RESET process can be attri...

Probing the validity of classical macroscopic physical laws at the nanoscale is important for nanoscience research. Herein, we report on experimental evidence that electron emission from individual hot carbon nanotubes (CNTs) heated by self-Joule-heating does not obey Richardson's law of thermionic emission. By using an in-situ multi-probe measurement technique, electron emission density (J) an...

This paper describes the Virtual Prototype of a Dielectric Window (DW) for High Power Microwave Vacuum Tubes and Linear Accelerators (LINAC). Design formulas are provided and Computer Aided Design techniques based on COMSOL Multiphysics are proposed. The virtual prototype considers the Thermo-mechanical effects due to the joule effect induced by the power which crosses the DW and the Thermal co...

High-power operation of AlGaN/GaN highelectron-mobility transistors (HEMTs) requires efficient heat removal through the substrate. GaN composite substrates including high-thermal-conductivity substrates such as SiC and diamond are promising, but these composite substrates require careful attention to thermal resistances at GaN-substrate interfaces. We report on thermal characterization of GaN-o...

Evidence is presented of a new cause of Joule heating within a simple electronic device involving a multiwalled carbon nanotube (CNT) mounted on two metal electrodes forming an electrical circuit. This time-resolved, high-resolution in situ observation of metal electrode material melting and its flow driven by the thermomigration and electromigration forces through the CNT channel sheds an addi...