A vapor–liquid–solid (VLS) growth of microwhiskers was developed by Wagner et al. in the 1960s. The recent re-examination of this method by the groups of Lieber, Yang, Samuelson, Wang, and others has resulted in the flourishing research into nanowires (NWs). Nearly all the IV, II– VI, III–V, and IV–VI semiconductor NWs can be synthesized. Ternary compound semiconductors have also been demonstra...

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circu...

Electron- and hole-transfer reactions are studied in colloidal InP quantum dots (QDs). Photoluminescence quenching and time-resolved transient absorption (TA) measurements are utilized to examine hole transfer from photoexcited InP QDs to the hole acceptor N,N,N',N'-tetramethyl-p-phenylenediamine (TMPD) and electron transfer to nanocrystalline titanium dioxide (TiO2) films. Core-confined holes ...

Water splitting by using sunlight for the production of hydrogen yields a storable product, which can be used as a fuel. There is considerable research into H2 generation, namely the reduction of protons to H2 in aqueous solution using semiconductor photocathodes. To maximize the photoelectrochemical (PEC) performance, the selection of the active materials and device configurations should be ca...

Photoconductive (PC) antennas fabricated on InP bombarded with 180 keV protons of different dosages (InP:H+) all exhibit a useful bandwidth of about 30 THz, comparable to that of the LT-GaAs PC antenna. The peak signal current of the best InP: H+ device (dosage of 10;15 ions/cm;2) is slightly higher than that of the LT-GaAs one, while the signal-to-noise ratio (SNR) of the former is about half ...

Uniform and vertical indium-oxide nanotube (IONT) arrays embedded well in n-type InP single crystal have been successfully prepared in situ by porous InP-template-assisted chemical vapor deposition (CVD). This IONT/InP nanostructure reveals high sensitivity to humidity at room temperature, which is ascribed to the ultrahigh surface-to-volume ratio of this nanostructure and the large number of o...

In this article, we report the growth and characterization of InAsP/InP strained single quantum well (SSQW), strained single quantum well (SSQW) stack, and strained multiple quantum well (SMQW) structures on (1 0 0)-oriented InP substrates grown by metalorganic chemical vapor deposition. Double-crystal X-ray di!raction, photoluminescence (PL) and transmission electron microscope (TEM) are used ...

Abstract The industrialization of quantum dot light-emitting diodes (QLEDs) requires the use less hazardous cadmium-free dots, among which ZnSe-based blue and InP-based green red dots have received considerable attention. In comparison, development QLEDs is lagging behind. Here, we prepare InP/ZnSe/ZnS with a diameter 8.6 nm. We then modify InP emitting layer by passivation various alkyl diamin...

Ion beam irradiation has been examined as a method for creating nanoscale semiconductor pillar and cone structures, but has the drawback of inaccurate nanostructure placement. We report on a method for creating and templating nanoscale InAs spikes by focused ion beam (FIB) irradiation of both homoepitaxial InAs films and heteroepitaxial InAs on InP substrates. These 'nanospikes' are created as ...